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Patent Searching and Data


Title:
LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP AND ILLUMINATING DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/103752
Kind Code:
A1
Abstract:
Disclosed is a light emitting diode provided with a compound semiconductor layer which at least includes a pn-junction-type light emitting section and a distortion adjusting layer laminated on the light emitting layer. The light emitting section has the laminated structure of the distortion light emitting layer expressed by a composition formula of (AlXGa1-X)YIn1-YP (where X and Y are the values satisfying inequalities of 0≤X≤0.1 and 0.39≤Y≤0.45, respectively) and a barrier layer, and the distortion adjusting layer is transparent to the light emitting wavelength and has a lattice constant smaller than that of the distortion light emitting layer and that of the barrier layer. The light emitting diode which has an emission wavelength of 655 nm or more, excellent monochromaticity, high power and/or high efficiency and high response speed is provided.

Inventors:
SEO NORIYOSHI (JP)
MATSUMURA ATSUSHI (JP)
TAKEUCHI RYOUICHI (JP)
Application Number:
PCT/JP2010/001476
Publication Date:
September 16, 2010
Filing Date:
March 03, 2010
Export Citation:
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Assignee:
SHOWA DENKO KK (JP)
SEO NORIYOSHI (JP)
MATSUMURA ATSUSHI (JP)
TAKEUCHI RYOUICHI (JP)
International Classes:
H01L33/30
Domestic Patent References:
WO2008099699A12008-08-21
Foreign References:
JP2007096168A2007-04-12
JP2004000093A2004-01-08
JPH05115219A1993-05-14
JP2008016412A2008-01-24
JP2007013107A2007-01-18
JP2009032752A2009-02-12
JP2009056780A2009-03-19
JP2009089300A2009-04-23
JPH0937648A1997-02-10
JP2002027831A2002-01-29
JP2004221042A2004-08-05
JP3230638B22001-11-19
JP2000151024A2000-05-30
JP3373561B22003-02-04
JP2008016412A2008-01-24
Other References:
See also references of EP 2408027A4
Attorney, Agent or Firm:
SHIGA, Masatake et al. (JP)
Masatake Shiga (JP)
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