Title:
ATOMIC LAYER DEPOSITION APPARATUS
Document Type and Number:
WIPO Patent Application WO/2013/191469
Kind Code:
A1
Abstract:
A shower head-reciprocating apparatus of an atomic layer deposition apparatus reciprocating the shower head, and a gas supply control apparatus alternately coating a substrate with a first reaction layer and a second reaction layer by repeatedly carrying out, through the shower head, the step of simultaneously injecting a source precursor and a purge gas and the step of simultaneously injecting a reactant precursor and a purge gas. The injected precursor and the purge gas are exhausted through the shower head immediately after the injection. The present invention avoids the mixing of a source precursor and a reactant precursor by not simultaneously injecting a source precursor and a reactant precursor, increases a throughput by simultaneously carrying out the injection of a precursor and the injection and exhaustion of a purge gas, and minimizes the reciprocation length of the shower head, thereby enabling application thereof to a large-size substrate and reducing the size of the apparatus. In addition, the present invention can selectively deposit an atomic layer on a predetermined area of the substrate.
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Inventors:
JEONG IN KWON (KR)
Application Number:
PCT/KR2013/005412
Publication Date:
December 27, 2013
Filing Date:
June 19, 2013
Export Citation:
Assignee:
MTS NANOTECH INC (KR)
International Classes:
H01L21/205
Foreign References:
| US20120094149A1 | 2012-04-19 | |||
| KR20100020919A | 2010-02-23 | |||
| US20090291211A1 | 2009-11-26 | |||
| US20090291209A1 | 2009-11-26 | |||
| KR20030068366A | 2003-08-21 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
리앤목 특허법인 (KR)
리앤목 특허법인 (KR)
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