BIAS CURRENT GENERATION CIRCUIT AND FLASH MEMORY

Title:

BIAS CURRENT GENERATION CIRCUIT AND FLASH MEMORY

Document Type and Number:

WIPO Patent Application WO/2021/218160

Kind Code:

A1

Abstract:

A bias current generation circuit and a flash memory. The bias current generation circuit comprises: a voltage source (100), wherein the voltage source (100) is used for providing a voltage required for generating a bias current; a switch circuit (200), wherein an input end of the switch circuit (200) is connected to the voltage source (100), and a control end of the switch circuit (200) receives a control signal and controls the switching-on and switching-off of the switch circuit (200) according to the control signal; and a current generation circuit (300), wherein the current generation circuit (300) is used for generating a bias current when the switch circuit (200) is switched on, and the current generation circuit (300) comprises a first MOS transistor and a second MOS transistor, with an input end of the first MOS transistor and a control end of the first MOS transistor both being connected to an output end of the switch circuit (200), an output end of the first MOS transistor being respectively connected to an input end of the second MOS transistor and a control end of the second MOS transistor, and an output end of the second MOS transistor being grounded.

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Inventors:

LI YOUHUI (CN)
ZHU LIJUAN (CN)

Application Number:

PCT/CN2020/134967

Publication Date:

November 04, 2021

Filing Date:

December 09, 2020

Export Citation:

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Assignee:

CSMC TECHNOLOGIES FAB2 CO LTD (CN)

International Classes:

G05F3/24; G05F3/16

Foreign References:

CN101387894A	2009-03-18
CN102545780A	2012-07-04
CN208314603U	2019-01-01
CN108664065A	2018-10-16
CN107390763A	2017-11-24
JP2013030830A	2013-02-07

Attorney, Agent or Firm:

ADVANCE CHINA IP LAW OFFICE (CN)

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