Title:
BLUE LIGHT EMITTING DIODE FORMED IN SILICON CARBIDE
Document Type and Number:
WIPO Patent Application WO1990007196
Kind Code:
A3
Abstract:
The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 465-470 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide having a first conductivity type and a first epitaxial layer of alpha silicon carbide upon the substrate having the same conductivity type as the substrate. A second epitaxial layer of alpha silicon carbide is upon the first epitaxial layer, has the opposite conductivity type from the first layer, and forms a p-n junction with the first epitaxial layer. In preferred embodiments, the first and second epitaxial layers have carrier concentrations sufficiently different from one another so that the amount of hole current and electron current that flow across the junction under biased conditions are different from one another and so that the majority of recombination events take place in the desired epitaxial layer.
Inventors:
EDMOND JOHN A (US)
Application Number:
PCT/US1989/005555
Publication Date:
September 07, 1990
Filing Date:
December 13, 1989
Export Citation:
Assignee:
CREE RESEARCH INC (US)
International Classes:
H01L33/00; H01L33/16; H01L33/20; H01L33/34; H01L33/40; (IPC1-7): H01L33/00
Foreign References:
| US3986193A | 1976-10-12 | |||
| US3999206A | 1976-12-21 |
Other References:
Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, Japan, 25-27 August 1987; N. KURODA et al.: "Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures", pages 227-230
Solid-State Electronics, Volume 19, No. 10, October 1976, Pergamon Press, (Oxford, GB), W. V. MUNCH et al.: "Silicon Carbide Light-Emitting Diodes with Epitaxial Junctions", pages 871-874
Soviet Technical Physics Letters, Volume 11, No. 2, February 1985, (New York, US), V.A. DMITRIEV et al.: "Silicon Carbide Light-Emitting Diodes for the Blue-Violet Region", pages 101-102
PATENT ABSTRACTS OF JAPAN, Volume 8, No. 209 (E-268) (1646), 22 September 1984; & JP-A-5994888 (Sanyo Denki K.K.) 31 May 1984
Soviet Physics Semiconductors, Volume 19, No. 10, October 1985, American Institute of Physics, (Woodbury, NY, US), S.F. AVRAMENKO et al.: "Edge Electroluminescence of 6H-SiC", page 1147
Japanese Journal of Applied Physics, Volume 19, No. 7, July 1980, (Tokyo, JP), S. NISHINO et al.: "Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition", pages L353-L356
Journal of Applied Physics, Volume 53, No. 10, October 1982, (New York, US), L. HOFFMANN et al.: "Silicon Carbide Blue Light Emitting Diodes with Improved External Quantum Efficiency", pages 6962-6967
PATENT ABSTRACTS OF JAPAN, Volume 13, No. 346 (E-798) (3694) 3 August 1989; & JP-A-1106476 (Sanyo Electric Co Ltd) 24 April 1989
Solid-State Electronics, Volume 19, No. 10, October 1976, Pergamon Press, (Oxford, GB), W. V. MUNCH et al.: "Silicon Carbide Light-Emitting Diodes with Epitaxial Junctions", pages 871-874
Soviet Technical Physics Letters, Volume 11, No. 2, February 1985, (New York, US), V.A. DMITRIEV et al.: "Silicon Carbide Light-Emitting Diodes for the Blue-Violet Region", pages 101-102
PATENT ABSTRACTS OF JAPAN, Volume 8, No. 209 (E-268) (1646), 22 September 1984; & JP-A-5994888 (Sanyo Denki K.K.) 31 May 1984
Soviet Physics Semiconductors, Volume 19, No. 10, October 1985, American Institute of Physics, (Woodbury, NY, US), S.F. AVRAMENKO et al.: "Edge Electroluminescence of 6H-SiC", page 1147
Japanese Journal of Applied Physics, Volume 19, No. 7, July 1980, (Tokyo, JP), S. NISHINO et al.: "Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition", pages L353-L356
Journal of Applied Physics, Volume 53, No. 10, October 1982, (New York, US), L. HOFFMANN et al.: "Silicon Carbide Blue Light Emitting Diodes with Improved External Quantum Efficiency", pages 6962-6967
PATENT ABSTRACTS OF JAPAN, Volume 13, No. 346 (E-798) (3694) 3 August 1989; & JP-A-1106476 (Sanyo Electric Co Ltd) 24 April 1989
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