Title:
BONDED SUBSTRATE, AND METHOD FOR MANUFACTURING BONDED SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2021/015122
Kind Code:
A1
Abstract:
This bonded substrate comprises: a silicon nitride ceramic substrate; a copper plate; and a bonding layer that bonds the copper plate to the silicon nitride ceramic substrate. The bonding layer has a first interface that makes contact with the silicon nitride ceramic substrate, and a second interface that makes contact with the copper plate, said bonding layer containing silicon nitride and a nitride of a reactive metal which is at least one metal selected from the group consisting of titanium and zirconium. The nitrogen atomic fraction in the bonding layer is greatest at the first interface and smallest at the second interface, and the total of the atomic fraction of the reactive metal and the atomic fraction of silicon in the bonding layer is smallest at the first interface and greatest at the second interface.
Inventors:
EBIGASE TAKASHI (JP)
Application Number:
PCT/JP2020/027829
Publication Date:
January 28, 2021
Filing Date:
July 17, 2020
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C04B37/02; H01L23/13
Domestic Patent References:
| WO2013094213A1 | 2013-06-27 |
Foreign References:
| JP2018506496A | 2018-03-08 | |||
| JP2013211546A | 2013-10-10 | |||
| JP2017035805A | 2017-02-16 | |||
| JP2007197229A | 2007-08-09 | |||
| JP2013211545A | 2013-10-10 | |||
| JP2002201076A | 2002-07-16 | |||
| JP2018506496W |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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