BONDING SUBSTRATE SURFACE DEFECT EVALUATION METHOD

Title:

BONDING SUBSTRATE SURFACE DEFECT EVALUATION METHOD

Document Type and Number:

WIPO Patent Application WO/2018/047501

Kind Code:

A1

Abstract:

The present invention provides a bonding substrate surface defect evaluation method comprising: a step of preparing a mirror-finished silicon single crystalline substrate; a step of performing a surface defect examination of the mirror-finished silicon single crystalline substrate; a step of depositing a polycrystalline silicon layer on the surface of the silicon single crystalline substrate that has been subjected to defect examination; a step of performing mirror-surface chamfering of the silicon single crystalline substrate on which the polycrystalline silicon layer has been deposited; a step of polishing the surface of the polycrystalline silicon layer; a step of performing a surface defect examination of the polished polycrystalline silicon layer; and a step of comparing the coordinates of the defects detected in the step performing the surface defect examination of the silicon single crystalline substrate and the step of performing the surface defect examination of the polycrystalline silicon layer to make a quality determination, as a bonding substrate, of the silicon single crystalline substrate having the polycrystalline silicon layer, on the basis of the presence or absence of defects at the same position. Thus, the bonding substrate surface defect evaluation method makes it possible to logically avoid a decrease in manufacturing yield of the bonding substrate, and reduce the rate of occurrence of void defects after bonding.

Inventors:

SATO KAZUYA (JP)
HASHIMOTO HIROMASA (JP)
NISHIZAWA TSUYOSHI (JP)
HORIE HIROTAKA (JP)

Application Number:

PCT/JP2017/027102

Publication Date:

March 15, 2018

Filing Date:

July 26, 2017

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK (JP)

International Classes:

H01L21/66; G01N21/956

Foreign References:

JP2010021242A	2010-01-28
JP2007192651A	2007-08-02

Other References: