BONDING WIRE FOR SEMICONDUCTOR DEVICE - NIPPON MICROMETAL CORP

Title:

BONDING WIRE FOR SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2016/203899

Kind Code:

A1

Abstract:

The present invention addresses the problem of achieving a balance between a proof stress ratio (=maximum proof stress divided by the 0.2% proof stress) of 1.1-1.6, and an increase in the bonding reliability of a ball bonding part at high temperatures in a bonding wire for a semiconductor device, said bonding wire having a Cu alloy core and a Pd coating layer formed on the surface of the Cu alloy core. The bonding reliability of a ball bonding part at high temperatures is increased by including, in the wire, an element that imparts connection reliability in a high-temperature environment. Among the crystal orientations in the lengthwise direction of the wire as found in the measurement of crystal orientations in relation to a cross-section of the core in a direction perpendicular to the wire axis of the bonding wire, the orientation proportion of crystal orientation<100>, for which the angular difference does not exceed 15 degrees relative to the lengthwise direction of the wire, is at least 30%. The proof stress ratio is kept at or below 1.6 by obtaining an average crystal grain size of 0.9-1.5 μm in a cross-section of the core in a direction perpendicular to the wire axis of the bonding wire.

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Inventors:

YAMADA TAKASHI (JP)
ODA DAIZO (JP)
HAIBARA TERUO (JP)
OISHI RYO (JP)
SAITO KAZUYUKI (JP)
UNO TOMOHIRO (JP)

Application Number:

PCT/JP2016/064926

Publication Date:

December 22, 2016

Filing Date:

May 19, 2016

Export Citation:

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Assignee:

NIPPON MICROMETAL CORP (JP)
NIPPON STEEL & SUMIKIN MAT CO (JP)

International Classes:

H01L21/60

Domestic Patent References:

WO2009072525A1

2009-06-11

Foreign References:

JP2009140953A

2009-06-25

Other References: