Title:
BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/104153
Kind Code:
A1
Abstract:
As bonding wire suitable for a vehicle mounted device, having superior capillary wear resistance and surface damage resistance while maintaining high bonding reliability and further satisfying total performance including ball forming performance and wedge bonding properties, provided is bonding wire for a semiconductor device that has a Cu alloy core material, a Pd coating layer formed on the surface of the Cu alloy core material, and a Cu surface layer formed on the surface of the Pd coating layer and is characterized in that the bonding wire includes Ni, the concentration of Ni to the wire as a whole is 0.1 - 1.2 percent by weight, the thickness of the Pd coating layer is 0.015 - 0.150 µm, and the thickness of the Cu surface layer is 0.0005 - 0.0070 µm.
Inventors:
OYAMADA TETSUYA (JP)
UNO TOMOHIRO (JP)
ODA DAIZO (JP)
YAMADA TAKASHI (JP)
UNO TOMOHIRO (JP)
ODA DAIZO (JP)
YAMADA TAKASHI (JP)
Application Number:
PCT/JP2016/068764
Publication Date:
June 22, 2017
Filing Date:
June 24, 2016
Export Citation:
Assignee:
NIPPON STEEL & SUMIKIN MAT CO (JP)
NIPPON MICROMETAL CORP (JP)
NIPPON MICROMETAL CORP (JP)
International Classes:
C22C9/00; H01L21/60; C22C9/04; C22C9/06
Domestic Patent References:
| WO2015163297A1 | 2015-10-29 |
Foreign References:
| JP2006190763A | 2006-07-20 |
Attorney, Agent or Firm:
YOSHIDA Tadanori (JP)
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