Title:
BONDING WIRE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/270312
Kind Code:
A1
Abstract:
Provided is a novel Cu bonding wire that suppresses galvanic corrosion in high-temperature environments and provides good bond reliability in a second bonding section, even when an encapsulating resin material with a high sulfur content is used. This bonding wire for a semiconductor device includes: a core material comprising Cu or a Cu alloy; and a cladding layer that is formed on the surface of the core material and has a combined Pd and Ni concentration of 90 at% or greater. In a concentration profile in the depth direction of the wire, said concentration profile being obtained by performing measurement according to Auger electron spectroscopy (AES) and such that there are 50 or more measurement points in the depth direction in the cladding layer, when X is the average value of the ratio CPd/CNi of the Pd concentration CpdPd (at%) and the Ni concentration CNi (at%) for all measurement points in the cladding layer, said average value X is 0.2 to 35.0, and the number of measurement points in the cladding layer that are within an absolute deviation of 0.3X from the average value X is 50% or more of the total number of measurement points in the cladding layer. After this bonding wire has been subjected to an encapsulation process using an encapsulating resin material with an S concentration of 20 mass ppm or greater to obtain an encapsulated body, when the encapsulated body is subjected to a heating process for 50 hours at 250°C, Ni sulfides are produced on the wire surface side of the cladding layer in the thickness direction of the cladding layer.
Inventors:
ODA DAIZO (JP)
ETO MOTOKI (JP)
YAMADA TAKASHI (JP)
HAIBARA TERUO (JP)
OISHI RYO (JP)
ETO MOTOKI (JP)
YAMADA TAKASHI (JP)
HAIBARA TERUO (JP)
OISHI RYO (JP)
Application Number:
PCT/JP2022/023124
Publication Date:
December 29, 2022
Filing Date:
June 08, 2022
Export Citation:
Assignee:
NIPPON MICROMETAL CORP (JP)
International Classes:
H01L21/60; C22C9/00
Domestic Patent References:
| WO2019031498A1 | 2019-02-14 | |||
| WO2016204138A1 | 2016-12-22 | |||
| WO2015163297A1 | 2015-10-29 | |||
| WO2020246094A1 | 2020-12-10 |
Foreign References:
| JP2006190763A | 2006-07-20 | |||
| JP2015119004A | 2015-06-25 | |||
| JP2017092078A | 2017-05-25 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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