Title:
CAPACITOR FORMING METHOD AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/065509
Kind Code:
A1
Abstract:
Embodiments of the present disclosure provide a capacitor forming method and a semiconductor device. The capacitor forming method comprises: providing a substrate; sequentially forming a first support layer and a first sacrificial layer on the substrate; forming a first through hole penetrating through the first support layer and the first sacrificial layer; filling the first through hole to form a first filling structure; forming a second support layer covering the remaining first sacrificial layer and the first filling structure; forming a second through hole penetrating through the second support layer, wherein the cross-sectional area of the first through hole is smaller than that of the second through hole in the radial direction parallel to the first through hole; forming a second sacrificial layer covering the remaining second support layer and the second through hole, and a third support layer; forming a third through hole penetrating through the third support layer and the second sacrificial layer; removing the first filling structure, to communicate the third through hole with the first through hole; and sequentially forming a first electrode layer covering the first through hole and the third through hole, a dielectric layer and a second electrode layer to form a capacitor.
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Inventors:
WANG XIAOLING (CN)
HUNG HAI-HAN (CN)
CHANG MIN-HUI (CN)
HUNG HAI-HAN (CN)
CHANG MIN-HUI (CN)
Application Number:
PCT/CN2021/138294
Publication Date:
April 27, 2023
Filing Date:
December 15, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN111106095A | 2020-05-05 | |||
| CN111223843A | 2020-06-02 | |||
| US20110076828A1 | 2011-03-31 | |||
| US20200395438A1 | 2020-12-17 | |||
| KR20070050164A | 2007-05-15 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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