SEMICONDUCTOR DEVICE AND METHOD FOR FORMING CAPACITOR

WIPO Patent Application WO/2023/065510

A1

Embodiments of the present disclosure provide a semiconductor device and a method for forming a capacitor. The semiconductor device at least comprises: a substrate and a capacitor, the capacitor comprising a bottom portion support layer, a middle support layer and a top portion support layer which are sequentially parallel to the substrate; a first electrode layer, which is provided perpendicular to the substrate and penetrates the bottom portion support layer, middle support layer and top portion support layer, wherein in the direction perpendicular to the substrate, the middle support layer has an upper surface and a lower surface, along a direction parallel to the substrate, a side wall of the first electrode layer comprises a first protrusion and a second protrusion that protrude towards the middle support layer, the first protrusion makes contact with a lower surface of the middle support layer, and the second protrusion makes contact with an upper surface of the middle support layer; a dielectric layer which covers a surface of the first electrode layer; and a second electrode layer, which covers a surface of the dielectric layer.

JP2927252	[Title of the Invention] Method for manufacturing a thin film capacitor
JPH04356958	SEMICONDUCTOR MEMORY AND ITS MANUFACTURE
JP2956582	[Title of Invention] Thin film capacitor and method for manufacturing the same.

WANG XIAOLING (CN)
HUNG HAI-HAN (CN)
CHANG MIN-HUI (CN)

PCT/CN2021/138332

April 27, 2023

December 15, 2021

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CHANGXIN MEMORY TECH INC (CN)

H01L27/108

CN108346661A	2018-07-31
KR20080000274A	2008-01-02
CN113410179A	2021-09-17
CN113299829A	2021-08-24
US20210242209A1	2021-08-05

CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)

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