CERAMIC CIRCUIT SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING CERAMIC CIRCUIT SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

CERAMIC CIRCUIT SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING CERAMIC CIRCUIT SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2023/204054

Kind Code:

A1

Abstract:

A ceramic circuit substrate according to an embodiment comprises: a ceramic substrate; a metal circuit; and a metal member. The metal circuit is provided on one surface of the ceramic substrate. The thickness of the metal circuit is 1 mm or more. The metal member is provided on the other surface of the ceramic substrate. The thickness of the metal member is 1 mm or more. The ratio Vf/Vb of a total volume Vf of the metal circuit to a total volume Vb of the metal member is 0.80-1.20.

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Inventors:

UENO TOSHIHIDE (JP)

Application Number:

PCT/JP2023/014392

Publication Date:

October 26, 2023

Filing Date:

April 07, 2023

Export Citation:

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Assignee:

TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)

International Classes:

H01L23/13; H01L23/12; H01L23/36; H05K1/02

Foreign References:

JP2013042165A	2013-02-28
JPH0786703A	1995-03-31
JP6430382B2	2018-11-28

Attorney, Agent or Firm:

IX PATENT LAW FIRM, P.C. (JP)

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