Title:
CHARGE-TRAP TYPE STORAGE DEVICE AND METHOD OF MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2012/090483
Kind Code:
A1
Abstract:
Provided in the present invention is a charge-trap type storage device and a method of manufacturing thereof, wherein leak current upon erasing can be reduced, and reliability can be improved. A charge-trap type storage device in one embodiment of the present invention comprises a laminated structure wherein a SiO2 layer (2), a SiN layer (3), a dielectric film (4), and an electrode film (5), which is a gate electrode, are formed on a silicon substrate (1), in this order. Information is written and erased by trapping/detrapping electric charges into/from the SiN layer (3), from the silicon substrate (1) side, which is done by applying a voltage to the electrode film (5). In such a configuration, the electrode film (5) is a metal-oxynitride layer, comprising W, N, and O, arranged on the dielectric film (4), which is a blocking insulation film.
Inventors:
ONO JUNKO (JP)
NAKAGAWA TAKASHI (JP)
NAKAGAWA TAKASHI (JP)
Application Number:
PCT/JP2011/007294
Publication Date:
July 05, 2012
Filing Date:
December 27, 2011
Export Citation:
Assignee:
CANON ANELVA CORP (JP)
ONO JUNKO (JP)
NAKAGAWA TAKASHI (JP)
ONO JUNKO (JP)
NAKAGAWA TAKASHI (JP)
International Classes:
H01L21/8247; H01L21/316; H01L27/115; H01L29/788; H01L29/792
Foreign References:
| JP2008244163A | 2008-10-09 | |||
| JP2010045395A | 2010-02-25 | |||
| JP2007173796A | 2007-07-05 | |||
| JP2009081203A | 2009-04-16 |
Attorney, Agent or Firm:
OKABE, Yuzuru et al. (JP)
Okabe 讓 (JP)
Okabe 讓 (JP)
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Claims:
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