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Title:
CHEMICAL MECHANICAL POLISHING COMPOSITION AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/151144
Kind Code:
A1
Abstract:
Provided are: a chemical mechanical polishing composition which can polish a semiconductor substrate (particularly, a ruthenium film-containing substrate) at high speed and reduce polishing scratches on a surface to be polished while suppressing the generation of ruthenium tetraoxide which is highly toxic to the human body; and a polishing method by using said composition. This chemical mechanical polishing composition contains titanium oxide-containing particles (A) and an organic acid (B), wherein the titanium oxide-containing particles (A) have a full width at half maximum of a peak portion, at which the diffraction intensity in a powder X-ray diffraction pattern is maximum, of less than 1°.

Inventors:
YAMADA YUUYA (JP)
NODA MASAHIRO (JP)
YAMANAKA TATSUYA (JP)
ISHIMAKI KOUKI (JP)
Application Number:
JP2019/002526
Publication Date:
August 08, 2019
Filing Date:
January 25, 2019
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Assignee:
JSR CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Domestic Patent References:
WO2016140246A12016-09-09
Foreign References:
JP2015168818A2015-09-28
JP2009206240A2009-09-10
JP2009010031A2009-01-15
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
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