Title:
CHEMICAL MECHANICAL POLISHING COMPOSITION AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/026778
Kind Code:
A1
Abstract:
The present invention provides a chemical mechanical polishing composition with which it is possible to suppress ruthenium corrosion and also perform chemical mechanical polishing of a semiconductor substrate containing ruthenium while maintaining a stable polishing speed. The composition for chemical mechanical polishing of the present invention contains: (A) abrasive grains; (B) an acid containing at least one anion selected from the group consisting of periodate ions (IO4
–), hypochlorite ions (CIO–), chlorite ions (CIO2
–) and hypobromite ions (BrO–) or a salt of said acid; and (C) hydrogen peroxide. MB/MC = 0.015 to 11, where MB (mol/L) is the amount of the (B) acid or salt thereof and MC (mol/L) is the amount of hydrogen peroxide (C).
Inventors:
ISHIMAKI KOKI (JP)
NAKAMURA SHUHEI (JP)
KAMEI YASUTAKA (JP)
NISHIMURA KOHEI (JP)
NAKAMURA SHUHEI (JP)
KAMEI YASUTAKA (JP)
NISHIMURA KOHEI (JP)
Application Number:
PCT/JP2022/029476
Publication Date:
March 02, 2023
Filing Date:
August 01, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Foreign References:
| JP2007311586A | 2007-11-29 | |||
| CN112920717A | 2021-06-08 | |||
| JP2020096190A | 2020-06-18 |
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
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