Title:
A CHEMICAL-MECHANICAL POLISHING LIQUID
Document Type and Number:
WIPO Patent Application WO/2009/070968
Kind Code:
A1
Abstract:
A chemical-mechanical polishing liquid is disclosed, which comprises silica
doped by aluminum, mixed corrosive inhibitors, water and one or more kinds of
the following rate-accelerators: organic acid, fluoride, ammonia, quaternary
amine salts and the derivatives thereof. The polishing liquid has higher polishing
rate for higher dielectric (such as TEOS), and can secure higher polishing rate
adjustability of Cu adjusted by the concentration of oxidizer, and has better
the effect of defect-correction, so it can suitably be used in controlling and
adjusting the abrasion degree at different line width in semiconductor device.
Inventors:
SONG PETER WEIHONG (CN)
BAO BOB JIANXIN (CN)
YAO DAISY YING (CN)
BAO BOB JIANXIN (CN)
YAO DAISY YING (CN)
Application Number:
PCT/CN2008/001857
Publication Date:
June 11, 2009
Filing Date:
November 07, 2008
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI (CN)
SONG PETER WEIHONG (CN)
BAO BOB JIANXIN (CN)
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
BAO BOB JIANXIN (CN)
YAO DAISY YING (CN)
International Classes:
C09G1/02
Foreign References:
| CN101041769A | 2007-09-26 | |||
| JP2007266597A | 2007-10-11 | |||
| US20070176142A1 | 2007-08-02 | |||
| US20070186484A1 | 2007-08-16 | |||
| US20070249167A1 | 2007-10-25 | |||
| CN101012356A | 2007-08-08 |
Attorney, Agent or Firm:
HANHONG LAW FIRM (New Huang Pu Financial BuildingNo. 61 East Nanjing Road, Shanghai 2, CN)
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