Title:
CHEMICAL-MECHANICAL POLISHING LIQUID
Document Type and Number:
WIPO Patent Application WO/2010/037265
Kind Code:
A1
Abstract:
The present invention discloses a chemical-mechanical polishing liquid comprising abrasive particles, oxidant and water. The liquid further comprises at least one inorganic salt for improving the removal rate of silicon dioxide, and at least one azoles-containing compound for increasing the removal rate of low-k materials. The salt and the compound have synergistic reaction. The chemical-mechanical polishing liquid according to the present invention can perform chemical-mechanical polishing of copper barrier layer at low stress, and has higher remove rate of dielectric material, and also has lower solid content.
Inventors:
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
YAO DAISY YING (CN)
Application Number:
PCT/CN2009/001084
Publication Date:
April 08, 2010
Filing Date:
September 25, 2009
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI (CN)
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
International Classes:
C09G1/02
Domestic Patent References:
| WO2007102138A2 | 2007-09-13 | |||
| WO2008105520A1 | 2008-09-04 |
Foreign References:
| CN1398944A | 2003-02-26 | |||
| CN1519286A | 2004-08-11 | |||
| US20050250329A1 | 2005-11-10 | |||
| US20020019202A1 | 2002-02-14 | |||
| CN1524918A | 2004-09-01 |
Attorney, Agent or Firm:
HANHONG LAW FIRM (No.61 East Nanjing Road, Shanghai 2, CN)
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