Title:
CHEMICAL-MECHANICAL POLISHING SLURRY
Document Type and Number:
WIPO Patent Application WO/2010/037264
Kind Code:
A1
Abstract:
A chemical-mechanical polishing slurry is provided, which comprises abrasive particles and one or more organic salts selected from the group of aliphatic amine hydrochloride, aliphatic amine sulfate, amide hydrochloride, amide sulfate, amino acid hydrochloride and amino acid sulfate. Said polishing slurry can effectively enhance the removal rate of silicon oxide dielectric materials in either an acidic or a basic medium. Higher removal rate of silicon oxide and planarization rate can be achieved with a lower content of abrasive particles, and no scratch and corrosion on the surface of materials as well.
More Like This:
| JP3106339 | ABRASIVE COMPOSITION |
| WO/2012/071780 | CHEMICAL MECHANICAL POLISHING SLURRY |
| WO/2006/053096 | HIGH SELECTIVITY SLURRY COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING |
Inventors:
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
YAO DAISY YING (CN)
Application Number:
PCT/CN2009/001083
Publication Date:
April 08, 2010
Filing Date:
September 25, 2009
Export Citation:
Assignee:
ANJI MICROELECTRONICS SHANGHAI (CN)
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
SONG PETER WEIHONG (CN)
YAO DAISY YING (CN)
International Classes:
C09G1/02
Foreign References:
| EP1072662A1 | 2001-01-31 | |||
| US5575837A | 1996-11-19 | |||
| US20060186089A1 | 2006-08-24 | |||
| CN101153205A | 2008-04-02 |
Attorney, Agent or Firm:
HANHONG LAW FIRM (New Huang Pu Financial BuildingNo. 61 East Nanjing Road, Shanghai 2, CN)
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