CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME

Title:

CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME

Document Type and Number:

WIPO Patent Application WO/2012/102267

Kind Code:

A1

Abstract:

The purpose of the present invention is to reduce thermal stress and thermal strain during manufacturing and to provide a low thermal resistance, low-cost circuit substrate and a semiconductor device using the same. The present invention is characterized by being circuit substrate provided with a ceramic substrate containing a nitride, a circuit wiring board joined to one surface of the ceramic substrate via a joining layer, and a metal support member joined to the other side of the ceramic substrate via a joining layer, and the joining layers being sintered compacts that contain silver or copper. The present invention is further characterized by the circuit substrate having oxide layers at the junction interface of the ceramic substrate and sintered compacts, and the oxide layers being constituted of a polycrystalline layer on the ceramic substrate side and being constituted of a noncrystalline layer on the sintered compact side.

Inventors:

MORITA TOSHIAKI (JP)
IDE EIICHI (JP)
YASUDA YUSUKE (JP)
ANDO TAKASHI (JP)

Application Number:

PCT/JP2012/051435

Publication Date:

August 02, 2012

Filing Date:

January 24, 2012

Export Citation:

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Assignee:

HITACHI LTD (JP)
MORITA TOSHIAKI (JP)
IDE EIICHI (JP)
YASUDA YUSUKE (JP)
ANDO TAKASHI (JP)

International Classes:

H01L23/15

Foreign References:

JP2010238784A	2010-10-21
JP2008198706A	2008-08-28
JP2008244242A	2008-10-09
JPH0726174B2	1995-03-22
JPH1065075A	1998-03-06
JP2000277953A	2000-10-06

Other References: