Title:
CLEANING LIQUID AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2022/176663
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a cleaning liquid for semiconductor devices, the cleaning liquid exhibiting excellent dissolution inhibition performance with respect to a metal layer that contains tungsten, while having excellent cleaning performance of dry etching residues. The present invention also addresses the problem of providing a method for cleaning a semiconductor substrate. A cleaning liquid for semiconductor devices according to the present invention contains one or more hydroxylamine compounds that are selected from the group consisting of hydroxylamine and hydroxylamine salts, a component A that is represented by a specific formula (1), and water. With respect to this cleaning liquid for semiconductor devices, the mass ratio of the content of the hydroxylamine compounds to the content of the component A is from 5 to 200.
Inventors:
MIZUTANI ATSUSHI (JP)
Application Number:
PCT/JP2022/004581
Publication Date:
August 25, 2022
Filing Date:
February 07, 2022
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C11D17/08; C11D7/24; C11D7/26; C11D7/32; H01L21/304
Domestic Patent References:
| WO2017099211A1 | 2017-06-15 | |||
| WO2017119334A1 | 2017-07-13 | |||
| WO2017126554A1 | 2017-07-27 |
Foreign References:
| JPH11194505A | 1999-07-21 | |||
| JP2015118125A | 2015-06-25 |
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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