Title:
CLEANING SOLUTION AND CLEANING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/100353
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a cleaning solution that is for a semiconductor substrate subjected to chemical-mechanical polishing and that has excellent ability to prevent corrosion of metal film and excellent ability to inhibit defects in metal film. The present invention also addresses the problem of providing a method for cleaning a semiconductor substrate that has been subjected to chemical-mechanical polishing. The cleaning solution according to the present invention is one that is for a semiconductor substrate subjected to chemical-mechanical polishing, and that contains a compound having an amine oxide compound which is a compound having an amine oxide group or a salt thereof, and at least one hydroxylamine compound selected from the group consisting of hydroxylamines, hydroxylamine derivatives, and salts thereof. The contained amount of the amine oxide compound is 0.00001-0.15 mass% with respect to the total mass of the cleaning solution.
Inventors:
HAYASHI KOHEI (JP)
KAMIMURA TETSUYA (JP)
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2020/038427
Publication Date:
May 27, 2021
Filing Date:
October 12, 2020
Export Citation:
Assignee:
FUJIFILM ELECTRONIC MAT CO LTD (JP)
International Classes:
C11D17/08; C11D7/32; C11D7/36; H01L21/304
Domestic Patent References:
| WO2006129538A1 | 2006-12-07 | |||
| WO2017126554A1 | 2017-07-27 | |||
| WO2011027772A1 | 2011-03-10 | |||
| WO2018043440A1 | 2018-03-08 |
Foreign References:
| JP2005026621A | 2005-01-27 |
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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