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Title:
CMOS IMAGE SENSOR PACKAGE MODULE AND FORMING METHOD THEREOF AND IMAGING DEVICE THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/173059
Kind Code:
A1
Abstract:
Provided are a complementary metal-oxide semiconductor (CMOS) image sensor package module and forming method thereof, and an imaging device comprising the CMOS image sensor package module. The CMOS image sensor package module comprises a pixel circuit substrate (100) and a chip joint structure (200) engaged therewith; a chip forming layer (210) in the chip joint structure (200) is embedded with a signal processing chip (20) and a dynamic random access memory (DRAM) chip (30); a chip interconnection layer (230) is electrically connected to the signal processing chip (20) and the DRAM chip (30). The package module also comprises an interconnection structure (110) and re-wiring layer (400) electrically connected to circuit interconnection terminals (101, 102), signal processing chip (20), and DRAM chip (30) of a read-out circuit in a pixel circuit substrate (100); the re-wiring layer (400) is electrically connected to an interconnection structure (110); the package module facilitates the buffering, in the DRAM chip (30), of a digital image signal outputted by the read-out circuit, and the signal is then transmitted from the DRAM chip (30) to the signal processing chip (20) for processing, which is advantageous to increasing the processing speed of transmitted data and digital image signals.

Inventors:
XIANG YANGHUI (CN)
Application Number:
PCT/CN2019/102255
Publication Date:
September 03, 2020
Filing Date:
August 23, 2019
Export Citation:
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Assignee:
NINGBO SEMICONDUCTOR INT CORP (CN)
International Classes:
H01L27/148
Foreign References:
CN108735770A2018-11-02
CN106104770A2016-11-09
CN107068629A2017-08-18
CN108091661A2018-05-29
CN107507821A2017-12-22
CN105070667A2015-11-18
US20180151621A12018-05-31
Attorney, Agent or Firm:
SHANGHAI SAVVY IP AGENCY CO., LTD. (CN)
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