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Patent Searching and Data


Title:
CMOS INVERTER, STORAGE CHIP, MEMORY AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/197769
Kind Code:
A1
Abstract:
The present application provides a CMOS inverter, a storage chip, a memory and an electronic device. In the CMOS inverter, a support portion is located on the surface of a substrate and is provided with a first vertical sidewall and a second vertical sidewall which are opposite to each other, a film-like first channel structure extends along the first vertical sidewall, and a second channel structure is provided on the second vertical sidewall, such that the occupied area can be reduced. A common drain is electrically connected to the first channel structure and the second channel structure separately, a first source is electrically connected to the first channel structure, and the first source and the common drain are arranged at intervals. The second source is electrically connected to the second channel structure, and the second source and the common drain are arranged at intervals. To control ON/OFF of the first channel structure and the second channel structure, a common gate is separately spaced apart from the first channel structure and the second channel structure by means of a gate dielectric layer. The first channel structure and the second channel structure have opposite carrier types, and the formed two transistors comprise one PMOS and one NMOS.

Inventors:
SUN YING (CN)
HUANG KAILIANG (CN)
WANG ZHAOGUI (CN)
JING WEILIANG (CN)
WANG ZHENGBO (CN)
LIAO HENG (CN)
Application Number:
PCT/CN2023/079223
Publication Date:
October 19, 2023
Filing Date:
March 02, 2023
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/786; H01L29/78; H01L21/336; H01L21/8238; H01L27/092
Foreign References:
JP2003298058A2003-10-17
US20030064554A12003-04-03
KR100625933B12006-09-18
US5563077A1996-10-08
US6107663A2000-08-22
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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