COBALT PRECURSOR, METHOD FOR PREPARING SAME, AND METHOD FOR PREPARING THIN FILM USING SAME

Title:

COBALT PRECURSOR, METHOD FOR PREPARING SAME, AND METHOD FOR PREPARING THIN FILM USING SAME

Document Type and Number:

WIPO Patent Application WO/2020/130215

Kind Code:

A1

Abstract:

The present invention relates to a vapor deposition compound capable of being deposited as a thin film through vapor deposition and, more particularly, to a novel cobalt precursor, a method for preparing same, and a method for preparing a thin film using same, the novel cobalt precursor being applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent reactivity, volatility and thermal stability.

Inventors:

KIM HYO-SUK (KR)
PARK MIN-SUNG (KR)
SEOK JANG-HYEON (KR)
PARK JUNG-WOO (KR)

Application Number:

PCT/KR2018/016739

Publication Date:

June 25, 2020

Filing Date:

December 27, 2018

Export Citation:

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Assignee:

HANSOL CHEMICAL CO LTD (KR)

International Classes:

C23C16/18; C07F15/06; C23C16/455

Foreign References:

KR20180022775A	2018-03-06
KR20100061183A	2010-06-07
US9416443B2	2016-08-16
KR20120053479A	2012-05-25

Other References:

SONG, Y. W. ET AL.: "Atomic Layer Deposition of Ru by Using a New Ru-precursor", ECS TRANSACTIONS, vol. 2, no. 4, 2006, pages 1 - 11, XP055720849

Attorney, Agent or Firm:

HANYANG PATENT FIRM (KR)

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