RARE EARTH PRECURSOR, MANUFACTURING METHOD THEREFOR, AND METHOD FOR FORMING THIN FILM BY USING SAME

Title:

RARE EARTH PRECURSOR, MANUFACTURING METHOD THEREFOR, AND METHOD FOR FORMING THIN FILM BY USING SAME

Document Type and Number:

WIPO Patent Application WO/2020/130216

Kind Code:

A1

Abstract:

The present invention relates to a compound capable of thin film deposition through vapor deposition and, specifically, to a rare earth compound, which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability and reactivity, a rare earth precursor comprising same, a manufacturing method therefor, and a method for forming a thin film by using same.

Inventors:

KIM HYO-SUK (KR)
SEOK JANG-HYEON (KR)
PARK JUNG-WOO (KR)
CHO EUN-JEONG (KR)

Application Number:

PCT/KR2018/016740

Publication Date:

June 25, 2020

Filing Date:

December 27, 2018

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HANSOL CHEMICAL CO LTD (KR)

International Classes:

C07F5/00; C23C16/40; C23C16/455

Foreign References:

KR20160085357A	2016-07-15
JP2012153688A	2012-08-16
KR20100084182A	2010-07-23
US20140335702A1	2014-11-13
JP2006037161A	2006-02-09

Attorney, Agent or Firm:

HANYANG PATENT FIRM (KR)

Download PDF:

View/Download PDF PDF Help

Previous Patent: COBALT PRECURSOR, METHOD FOR PREPARING SAME, AND METHOD FOR PREPARING THIN FILM USING SAME

Next Patent: DEVICE FOR PROCESSING OBJECT-OF-INTEREST, AND METHOD THEREFOR