Title:
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/055852
Kind Code:
A1
Abstract:
A composition which is decreased in molecular weight so as to achieve planarity capable of embedding unevenness of a substrate, and used for the purpose of forming a resist underlayer film that has a large dry etching selectivity and enables formation of a resist pattern having a desired shape.
Specifically disclosed is a composition for forming a resist underlayer film, which is characterized by containing a compound obtained by substituting an end of a monomer with an alcohol compound (a solvent) and having a molecular weight not more than 2,000, namely a compound which is obtained by reacting a tri-epoxy compound, an optionally substituted acid anhydride and the alcohol compound and has a weight average molecular weight of 500-2,000.
Inventors:
HIROI YOSHIOMI (JP)
ISHIDA TOMOHISA (JP)
SAKAMOTO RIKIMARU (JP)
ISHIDA TOMOHISA (JP)
SAKAMOTO RIKIMARU (JP)
Application Number:
PCT/JP2009/069197
Publication Date:
May 20, 2010
Filing Date:
November 11, 2009
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD (JP)
HIROI YOSHIOMI (JP)
ISHIDA TOMOHISA (JP)
SAKAMOTO RIKIMARU (JP)
HIROI YOSHIOMI (JP)
ISHIDA TOMOHISA (JP)
SAKAMOTO RIKIMARU (JP)
International Classes:
G03F7/11; G03F7/40; H01L21/027
Domestic Patent References:
WO2005111724A1 | 2005-11-24 |
Foreign References:
JP2006502448A | 2006-01-19 | |||
JP2008089711A | 2008-04-17 |
Attorney, Agent or Firm:
HANABUSA, Tsuneo et al. (JP)
Sepal Tsuneo (JP)
Sepal Tsuneo (JP)
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