COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR FORMING RESIST UNDERLAYER FILM

Title:

COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR FORMING RESIST UNDERLAYER FILM

Document Type and Number:

WIPO Patent Application WO/2023/008149

Kind Code:

A1

Abstract:

Provided is a composition for forming a resist underlayer film, said composition containing: a metal compound; a polymer having a first structural unit represented by formula (1) and a second structural unit represented by formula (2); and a solvent. (In formula (1), R1 is a hydrogen atom or a substituted or unsubstituted C1-20 monovalent hydrocarbon group. R2 is a substituted or unsubstituted C1-20 monovalent hydrocarbon group.) (In formula (2), R3 is a hydrogen atom or a substituted or unsubstituted C1-20 monovalent hydrocarbon group. L is a single bond or a divalent linking group. Ar is a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted 6 to 20-membered aromatic ring. R4 is a C1-10 monovalent hydroxyalkyl group or hydroxy group. n is an integer from 0 to 8. When n is 2 or more, the plurality of R4 groups are the same or different.)

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Inventors:

OZAKI YUKI (JP)
SERIZAWA RYUICHI (JP)
HIRASAWA KENGO (JP)
HIRABAYASHI HIROKI (JP)

Application Number:

PCT/JP2022/027130

Publication Date:

February 02, 2023

Filing Date:

July 08, 2022

Export Citation:

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Assignee:

JSR CORP (JP)

International Classes:

G03F7/11; C08F212/14; C08F220/12; H01L21/027

Foreign References:

JP2016532739A	2016-10-20
JP2011514662A	2011-05-06
JP2013185155A	2013-09-19