Title:
COMPOSITION FOR FORMING SILICON FILM AND METHOD FOR FORMING SILICON FILM
Document Type and Number:
WIPO Patent Application WO/2004/019393
Kind Code:
A1
Abstract:
A composition for forming a silicon film containing silicon particles and a dispersing medium, and a method for forming a silicon film wherein a coating film of the above composition is formed on a substrate and then, an instantaneous fusion, a heat treatment or an optical treatment is conducted. Using the composition and method, a poly-crystal silicon film having a desired thickness that may be used as a silicon film for a solar battery can be efficiently produced in a simple and easy way.
Inventors:
MATSUKI YASUO (JP)
IWASAWA HARUO (JP)
KATO HITOSHI (JP)
IWASAWA HARUO (JP)
KATO HITOSHI (JP)
Application Number:
PCT/JP2003/010380
Publication Date:
March 04, 2004
Filing Date:
August 15, 2003
Export Citation:
Assignee:
JSR CORP (JP)
MATSUKI YASUO (JP)
IWASAWA HARUO (JP)
KATO HITOSHI (JP)
MATSUKI YASUO (JP)
IWASAWA HARUO (JP)
KATO HITOSHI (JP)
International Classes:
C23C24/10; C23C26/02; H01L21/208; (IPC1-7): H01L21/208
Foreign References:
| US6086945A | 2000-07-11 | |||
| JP2001308020A | 2001-11-02 | |||
| JPH01110776A | 1989-04-27 | |||
| US4690797A | 1987-09-01 |
Other References:
See also references of EP 1551057A4
Attorney, Agent or Firm:
Ohshima, Masataka (Fukuya Bldg. 3, Yotsuya 4-chom, Shinjuku-ku Tokyo, JP)
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