Title:
COMPOUND SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2016/052948
Kind Code:
A1
Abstract:
Disclosed are a compound semiconductor with good thermoelectric conversion performance, and a use of the same. The compound semiconductor according to the present invention may be represented by Formula 1 as follows: M1aCo4Sb12-xM2x, whereinM1 and M2 are In and at least one rare-earth metal element, and 0≤a≤1.8 and 0
Inventors:
LEE JAE-KI (KR)
KIM TAE-HOON (KR)
PARK CHEOL-HEE (KR)
KIM TAE-HOON (KR)
PARK CHEOL-HEE (KR)
Application Number:
PCT/KR2015/010192
Publication Date:
April 07, 2016
Filing Date:
September 25, 2015
Export Citation:
Assignee:
LG CHEMICAL LTD (KR)
International Classes:
H01L35/34; H01L35/14
Foreign References:
| US20100288967A1 | 2010-11-18 | |||
| US20050123431A1 | 2005-06-09 |
Other References:
DUAN, BO ET AL.: "Beneficial effect of Se substitution on thermoelectric properties of Co4Sb11.9-xTexSe0.1 skutterudites", JOURNAL OF SOLID STATE CHEMISTRY, vol. 193, September 2012 (2012-09-01), pages 8 - 12, XP055424556
L. DENG ET AL.: "The thermoelectric properties of In0.5Co4Sb12-xGex alloys prepared by HPHT", MATERIALS LETTERS, vol. 68, 1 February 2012 (2012-02-01), pages 314 - 316, XP028351725
L. DENG ET AL.: "The thermoelectric properties of Co4Sb12-xTex synthesized at different pressure", MATERIALS LETTERS, vol. 65, no. Issue 6, 31 March 2011 (2011-03-31), pages 1057 - 1059, XP028143587
See also references of EP 3203535A4
L. DENG ET AL.: "The thermoelectric properties of In0.5Co4Sb12-xGex alloys prepared by HPHT", MATERIALS LETTERS, vol. 68, 1 February 2012 (2012-02-01), pages 314 - 316, XP028351725
L. DENG ET AL.: "The thermoelectric properties of Co4Sb12-xTex synthesized at different pressure", MATERIALS LETTERS, vol. 65, no. Issue 6, 31 March 2011 (2011-03-31), pages 1057 - 1059, XP028143587
See also references of EP 3203535A4
Attorney, Agent or Firm:
PHIL & ONZI INT'L PATENT & LAW FIRM (KR)
특허법인 필앤온지 (KR)
특허법인 필앤온지 (KR)
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