Title:
COMPOUND SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND LIGHT EMITTING ELEMENT USING COMPOUND SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/164847
Kind Code:
A1
Abstract:
This compound semiconductor substrate has, on a second GaP window layer, a light emitting layer configured of a double hetero structure composed of a lower cladding layer represented by the formula of (AlxGa1-x)yIn1-yP (0
Inventors:
TAKAHASHI MASANOBU (JP)
SAKAI KENJI (JP)
SHINOHARA MASAYUKI (JP)
SAKAI KENJI (JP)
SHINOHARA MASAYUKI (JP)
Application Number:
PCT/JP2012/003192
Publication Date:
December 06, 2012
Filing Date:
May 16, 2012
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
TAKAHASHI MASANOBU (JP)
SAKAI KENJI (JP)
SHINOHARA MASAYUKI (JP)
TAKAHASHI MASANOBU (JP)
SAKAI KENJI (JP)
SHINOHARA MASAYUKI (JP)
International Classes:
H01L33/30; H01L21/205
Foreign References:
| JP2010141201A | 2010-06-24 | |||
| JP2011077496A | 2011-04-14 | |||
| JPH09186360A | 1997-07-15 | |||
| JP2005093895A | 2005-04-07 | |||
| JP2010245362A | 2010-10-28 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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Claims: