HIGH−HEAT CONDUCTIVITY Si−CONTAINING MATERIAL AND ITS MANUFACTURING METHOD

Title:

HIGH−HEAT CONDUCTIVITY Si−CONTAINING MATERIAL AND ITS MANUFACTURING METHOD

Document Type and Number:

WIPO Patent Application WO/2003/053880

Kind Code:

A1

Abstract:

A high−heat conductivity Si−containing material containing an Si phase the lattice constant of which is so controlled as to be over 0.54302 nm and below 0.54311 nm at room temperatures. A ceramic material not containing a B−containing compound is baked. Degradation of heat conductivity can be prevented, and a high−heat conductivity can be stably exhibited.

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Inventors:

MORIMOTO KENJI (JP)
KAWASAKI SHINJI (JP)
SAKAI HIROAKI (JP)

Application Number:

PCT/JP2002/013273

Publication Date:

July 03, 2003

Filing Date:

December 19, 2002

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Assignee:

NGK INSULATORS LTD (JP)
MORIMOTO KENJI (JP)
KAWASAKI SHINJI (JP)
SAKAI HIROAKI (JP)

International Classes:

C04B35/573; C04B35/565; C22C28/00; (IPC1-7): C04B35/56

Foreign References:

JPS60131862A	1985-07-13
JPH10291857A	1998-11-04
US5846460A	1998-12-08
JPS55109273A	1980-08-22
EP0519644A1	1992-12-23
US4299631A	1981-11-10

Other References:

THE JAPAN INSTITUTE OF METALS: "Kinzoku Data Book", 30 January 1984, MARUZEN CO., LTD., pages: 43, XP002964721

Attorney, Agent or Firm:

Watanabe, Kazuhira (No.8 Kikuboshi Tower Building 20-18, Asakusabashi 3-chom, Taito-ku Tokyo, JP)

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