Title:
CONTACT STRUCTURE FORMING METHOD, SEMICONDUCTOR STRUCTURE AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/082573
Kind Code:
A1
Abstract:
Disclosed in the present invention are a contact structure forming method, a semiconductor structure and a memory. The method comprises: providing a substrate, and forming a sacrificial layer on the substrate; patterning the sacrificial layer to form a first gap, which exposes the substrate, in the sacrificial layer; depositing a dielectric layer in the first gap; removing the sacrificial layer, and forming a second gap in the dielectric layer; and etching at least part of the dielectric layer on the periphery of the second gap so as to expand the opening size of the second gap.
Inventors:
ZANG JUNSHENG (CN)
Application Number:
PCT/CN2022/092125
Publication Date:
May 19, 2023
Filing Date:
May 11, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/528; H01L21/768
Foreign References:
| US20120261828A1 | 2012-10-18 | |||
| CN113517223A | 2021-10-19 | |||
| CN112701056A | 2021-04-23 | |||
| US20120261829A1 | 2012-10-18 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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