Title:
CONTENT ADDRESSABLE MEMORY CELL AND CONTENT ADDRESSABLE MEMORY
Document Type and Number:
WIPO Patent Application WO/2014/208051
Kind Code:
A1
Abstract:
In order to provide a technique for reducing the area of a content addressable memory cell and suppressing leak current in a content addressable memory for calculating degrees of similarity, this content addressable memory cell is provided with: a resistance network having a plurality of current paths, a logic circuit for selecting a current path in response to input data, and a variable-resistance-type non-volatile memory element for recording memory data, the variable-resistance-type non-volatile memory element being provided to at least one of the plurality of current paths, the resistance value of the resistance network varying according to the result of a logical operation between the input data and the memory data; and a charge/discharge circuit connected to the resistance network and a match line, a signal inputted from the match line being outputted by the charge/discharge circuit after a time delay that varies according to the result of a logical operation between the input data and the memory data.
Inventors:
NEBASHI RYUSUKE (JP)
SAKIMURA NOBORU (JP)
SUGIBAYASHI TADAHIKO (JP)
SAKIMURA NOBORU (JP)
SUGIBAYASHI TADAHIKO (JP)
Application Number:
PCT/JP2014/003248
Publication Date:
December 31, 2014
Filing Date:
June 17, 2014
Export Citation:
Assignee:
NEC CORP (JP)
International Classes:
G11C15/04; G11C15/02
Domestic Patent References:
| WO2010137573A1 | 2010-12-02 |
Foreign References:
| JP2011048894A | 2011-03-10 |
Attorney, Agent or Firm:
SHIMOSAKA, NAOKI (JP)
Naoki Shimosaka (JP)
Naoki Shimosaka (JP)
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