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Title:
SWITCHING ELEMENT, SWITCHING ELEMENT MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2014/208050
Kind Code:
A1
Abstract:
In order to provide a switching element having excellent operational stability and a high production yield, and a semiconductor device using the switching element, this switching element has: a non-volatile variable resistance element, which has a first electrode, a second electrode, and a non-volatile variable resistance layer that is provided between the first electrode and the second electrode; and a rectifying element, which has the second electrode, a third electrode, and a volatile variable resistance layer that is provided between the second electrode and the third electrode. The switching element also has an insulating material at least on a side surface of the third electrode.

Inventors:
BANNO NAOKI (JP)
TADA MUNEHIRO (JP)
Application Number:
PCT/JP2014/003247
Publication Date:
December 31, 2014
Filing Date:
June 17, 2014
Export Citation:
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Assignee:
NEC CORP (JP)
International Classes:
H01L27/105; H01L21/3205; H01L21/768; H01L21/82; H01L23/532; H01L45/00; H01L49/00
Domestic Patent References:
WO2012042828A12012-04-05
Foreign References:
JP2011238875A2011-11-24
JPH05217961A1993-08-27
JP2006156675A2006-06-15
JP2011066313A2011-03-31
JP2010040728A2010-02-18
Attorney, Agent or Firm:
SHIMOSAKA, NAOKI (JP)
Naoki Shimosaka (JP)
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