Title:
CONTROL CIRCUIT OF THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2017/016009
Kind Code:
A1
Abstract:
A control circuit of a thin film transistor comprises a substrate (201); a silicon nitride layer (202), provided on the substrate (201); a silicon dioxide layer (204), provided on the silicon nitride layer (202); a shading layer, located in the silicon nitride layer (202), and the shading layer comprising a first shading area (2031) and a second shading area (2032); at least one N-shaped metal oxidation semiconductor (42), disposed on the silicon dioxide layer (204) corresponding to the position of the first shading area (2031); and at least one P-shaped metal oxidation semiconductor (62), disposed on the silicon dioxide layer (204) corresponding to the position of the second shading area (2032). The N-shaped metal oxidation semiconductor (42) and the P-shaped metal oxidation semiconductor (62) respectively have a gate electrode layer (208), and electric potentials of a first control signal received by the potential pulse of the gate electrode layers (208) and a second control signal received by the shading layer synchronously change.
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Inventors:
ZHAO MANG (CN)
CHEN GUI (CN)
TIAN YONG (CN)
CHEN GUI (CN)
TIAN YONG (CN)
Application Number:
PCT/CN2015/087758
Publication Date:
February 02, 2017
Filing Date:
August 21, 2015
Export Citation:
Assignee:
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/786; G02F1/1368; G09G3/36
Foreign References:
| TW505798B | 2002-10-11 | |||
| CN101192622A | 2008-06-04 | |||
| CN1378290A | 2002-11-06 | |||
| CN101663758A | 2010-03-03 | |||
| CN103579115A | 2014-02-12 | |||
| US20070002194A1 | 2007-01-04 |
Attorney, Agent or Firm:
ESSEN PATENT & TRADEMARK AGENCY (CN)
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