METHOD FOR GROWING GRAPHENE ON SURFACE OF GRID ELECTRODE AND METHOD FOR GROWING GRAPHENE ON SURFACES OF SOURCE AND DRAIN ELECTRODES

Title:

METHOD FOR GROWING GRAPHENE ON SURFACE OF GRID ELECTRODE AND METHOD FOR GROWING GRAPHENE ON SURFACES OF SOURCE AND DRAIN ELECTRODES

Document Type and Number:

WIPO Patent Application WO/2017/016008

Kind Code:

A1

Abstract:

Provided are a method for growing graphene on a surface of a grid electrode and a method for growing graphene on surfaces of source and drain electrodes. A low-temperature plasma enhanced vapor deposition manufacturing procedure is used to generate, on a grid electrode or source and drain electrodes containing copper, a graphene thin film having a controllable film thickness and being overlapped with a pattern of the grid electrode or the source and drain electrodes, wherein the preparation temperature of the graphene is relatively low, so that the structure of a thin film transistor can be minimally damaged, an adopted carbon source has a wide range of sources and is low cost, the manufacturing method is simple, and existing PECVD equipment in a thin film transistor production line can be used without increasing the cost. The grid electrode or the source and drain electrodes covered with the graphene are prevented from coming into contact with water and oxygen due to the protective effect of the graphene, solving the problem that the grid electrode or the source and drain electrodes containing the metal copper is very easily oxidized in a traditional TFT manufacturing procedure. In addition, the grapheme, with a high electrical conductivity, also does not affect the electrical performance of the whole device.

Inventors:

HU TAO (CN)

Application Number:

PCT/CN2015/087728

Publication Date:

February 02, 2017

Filing Date:

August 21, 2015

Export Citation:

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Assignee:

SHENZHEN CHINA STAR OPTOELECT (CN)

International Classes:

H01L21/285

Foreign References:

CN103579631A	2014-02-12
CN102011100A	2011-04-13
CN103208685A	2013-07-17
CN103072333A	2013-05-01
CN104030277A	2014-09-10
CN104108706A	2014-10-22
CN102260858A	2011-11-30
CN104386675A	2015-03-04
CN103928305A	2014-07-16

Attorney, Agent or Firm:

COMIPS INTELLECTUAL PROPERTY OFFICE (CN)

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