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Title:
COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/068903
Kind Code:
A1
Abstract:
A copolymer for semiconductor lithography and a process for producing the copolymer. The copolymer for semiconductor lithography comprises at least one kind of repeating units selected among (A) hydroxylated repeating units, (B) repeating units having a structure in which a hydroxy group is protected by a group which inhibits dissolution in an alkaline developing solution and dissociates by the action of an acid, (C) repeating units having a lactone structure, and (D) repeating units having a cyclic ether structure, and is characterized in that when a propylene glycol monomethyl ether acetate solution containing the copolymer and having a viscosity of 15 mPa sec is passed through a filter having a pore diameter of 0.03 µm at a pressure difference of 0.1 MPa for 60 minutes, the average flow velocity per unit filter area is 200 g/min/m2 or higher.

Inventors:
YAMAGISHI TAKANORI (JP)
KUDO MASAAKI (JP)
YAMAGUCHI SATOSHI (JP)
Application Number:
PCT/JP2007/001353
Publication Date:
June 12, 2008
Filing Date:
December 05, 2007
Export Citation:
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Assignee:
MARUZEN PETROCHEM CO LTD (JP)
YAMAGISHI TAKANORI (JP)
KUDO MASAAKI (JP)
YAMAGUCHI SATOSHI (JP)
International Classes:
C08F220/28; C08F2/06; C08F212/14; C08F220/38; G03F7/039; H01L21/027
Foreign References:
JP2004269855A2004-09-30
JP2006176573A2006-07-06
JP2003186196A2003-07-03
JP2004231950A2004-08-19
Attorney, Agent or Firm:
THE PATENT CORPORATE BODY ARUGA PATENT OFFICE (3-6 Nihonbashiningyocho 1-chome, Chuo-k, Tokyo 13, JP)
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