Title:
CRYSTAL GROWTH METHOD AND APPARATUS
Document Type and Number:
WIPO Patent Application WO/2024/050843
Kind Code:
A1
Abstract:
A crystal growth method and apparatus. The method comprises placing a raw material in a raw material area of a growth cavity; placing a seed crystal in a growth area of the growth cavity, wherein the raw material area and the growth area are separated by a partition plate, and the partition plate comprises at least one discharge port; and growing a crystal by means of a physical vapor transport method on the basis of the seed crystal and the raw material.
Inventors:
WANG YU (CN)
GUAN WEIMING (CN)
GUAN WEIMING (CN)
Application Number:
PCT/CN2022/118260
Publication Date:
March 14, 2024
Filing Date:
September 09, 2022
Export Citation:
Assignee:
MEISHAN BOYA ADVANCED MAT CO LTD (CN)
International Classes:
C30B29/48; C30B23/00; C30B29/36; C30B29/40; C30B29/50
Foreign References:
| CN110129885A | 2019-08-16 | |||
| CN112962083A | 2021-06-15 | |||
| US20050166833A1 | 2005-08-04 | |||
| CN110067026A | 2019-07-30 | |||
| CN114232095A | 2022-03-25 |
Attorney, Agent or Firm:
METIS IP (CHENGDU) LLC (CN)
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