Title:
CRYSTALLIZATION-INDEX ACQUISITION DEVICE AND CRYSTALLIZATION-INDEX ACQUISITION METHOD
Document Type and Number:
WIPO Patent Application WO/2012/117602
Kind Code:
A1
Abstract:
In this crystallization-index acquisition device (1), the theoretical dielectric function (93) of a microcrystalline-silicon film (5) is expressed as the composition of a plurality of partial dielectric-function models, and a crystallization index (κ) indicating the degree of crystallization of the microcrystalline-silicon film (5) is set on the basis of the amplitude of one of said partial dielectric-function models: namely, a high-energy-peak model (95) that contributes to a high-energy-side peak (92) in the imaginary part of the dielectric function of the crystalline-silicon film. Each of the parameters for the plurality of partial dielectric-function models is then expressed in terms of the crystallization index (κ), and by changing the parameter values by changing the crystallization index (κ), the theoretical dielectric function (93) is fitted to a measured dielectric function obtained by a spectroscopic ellipsometer. This makes it possible to easily and precisely obtain the crystallization index (κ) of the microcrystalline-silicone film (5).
Inventors:
FUJIWARA HIROYUKI (JP)
YAMAGUCHI SHINJI (JP)
SUGIMOTO YOSHIO (JP)
YAMAGUCHI SHINJI (JP)
SUGIMOTO YOSHIO (JP)
Application Number:
PCT/JP2011/072219
Publication Date:
September 07, 2012
Filing Date:
September 28, 2011
Export Citation:
Assignee:
DAINIPPON SCREEN MFG (JP)
FUJIWARA HIROYUKI (JP)
YAMAGUCHI SHINJI (JP)
SUGIMOTO YOSHIO (JP)
FUJIWARA HIROYUKI (JP)
YAMAGUCHI SHINJI (JP)
SUGIMOTO YOSHIO (JP)
International Classes:
H01L21/66; G01N21/21; H01L31/04
Domestic Patent References:
| WO2003073515A1 | 2003-09-04 | |||
| WO2009145068A1 | 2009-12-03 |
Attorney, Agent or Firm:
MATSUSAKA, Masahiro et al. (JP)
Matsusaka Masahiro (JP)
Matsusaka Masahiro (JP)
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Claims: