PRIORITY CLAIM

This application claims the benefit of the filing date of United States Provisional Patent Application Serial No. 63/369,486, filed July 26, 2022, for “CUTTING ELEMENTS INCLUDING BINDER MATERIALS HAVING MODULATED MORPHOLOGIES, EARTH-BORING TOOLS INCLUDING SUCH CUTTING ELEMENTS, AND RELATED METHODS OF MAKING AND USING SAME,” the disclosure of which is hereby incorporated herein in its entirety by this reference.

TECHNICAL FIELD

This disclosure relates generally to cutting elements for earth-boring tools and related earth-bonng tools and methods. More specifically, disclosed embodiments relate to techniques for producing a cutting element including a poly crystalline diamond cutting table including a binder material including an intermetallic phase and a metallic phase and to related cutting elements.

BACKGROUND

Earth boring tools for forming wellbores in subterranean earth formations may include a plurality of cutting elements secured to a body. For example, fixed cutter earth boring rotary drill bits (also referred to as “drag bits”) include a plurality of cutting elements that are fixedly attached to a bit body of the drill bit. Similarly, roller cone earth boring rotary drill bits include cones that are mounted on bearing pins extending from legs of a bit body such that each cone is capable of rotating about the bearing pin on which the cone is mounted. A plurality of cutting elements may be mounted to each cone of the drill bit.

The cutting elements used in earth boring tools often include poly crystalline diamond compact (often referred to as “PDC”) cutters, which are cutting elements that include a polycrystalline diamond (PCD) material. Such polycrystalline diamond cutting elements are formed by sintering and bonding together relatively small diamond grains or crystals under conditions of high pressure and high temperature, typically in the presence of a catalyst material (typically including a Group VIII element, such as cobalt (Co), iron (Fe), or nickel (Ni), or an alloy or mixture having such elements), to form a layer of poly crystalline diamond material (e.g., a diamond table) on a cutting element substrate. These processes are often referred to as high-pressure/high-temperature (or “HPHT”) processes. Catalyst material is typically mixed with the diamond grains to reduce the amount of oxidation of diamond by oxygen and carbon dioxide during an HPHT process and to promote diamond to diamond bonding.

The cutting element substrate may include a cermet material (i.e., a ceramic metal composite material) such as cobalt cemented tungsten carbide. In such instances, the cobalt (or other catalyst material) in the cutting element substrate may be drawn into the diamond grains or crystals during sintering and serve as a catalyst material for forming a diamond table from the diamond grains or cry stals. In other methods, powdered catalyst material may be mixed with the diamond grains or crystals prior to sintering the grains or crystals together in an HPHT process.

Upon formation of a diamond table using an HPHT process, catalyst material may remain in interstitial spaces between the grains or crystals of diamond in the resulting poly crystalline diamond table. The presence of the catalyst material in the diamond table may contribute to thermal damage in the diamond table when the cutting element is heated during use, due to friction at the contact point between the cutting element and the formation.

Conventional PDC fabrication relies on a catalyst alloy (e.g., a binder) that sweeps through the compacted diamond feed during HPHT synthesis. Traditional catalyst alloys are cobalt (Co) based to facilitate diamond intergrowth between the compacted diamond material. Conventional Co, Co-Ni alloy, and Co-Ni-Cr alloy materials form a solid binder material including relatively large portions exhibiting a single phase metallic structure that, while improving durability' of the diamond table, is not thermally stable. Conventional Co- Al-C alloy materials form a solid binder material including relatively large portions exhibiting a single phase intermetallic structure that, while being thermally stable, is brittle and results in the diamond table having elevated residual stress and reduced durability. FIG. 1 A depicts an electron image of a morphology of a prior art Co-Al-C alloy material. The darker portions of the image depict the intermetallic phase precipitates. FIG. IB depicts an electron image of a fracture morphology of a prior art cutting element including a Co-Al-C alloy material, following a fracture event. As shown in FIG. IB, the conventional Co-Al-C alloy material exhibits a brittle fracture morphology, as evidenced by the relatively flat topography depicted within the Co-Al-C alloy material. Conventional alloys also undesirably facilitate the formation of graphite from diamond during drilling. Formation of graphite in the PCD material can rupture diamond necking regions (i.e., grain boundaries) due to an approximate 57% volumetric expansion during the transformation. This phase transformation is known as “back conversion” or “reverse graphitization,” and typically occurs at temperatures exceeding 900°C, near cutting element cutting edge temperatures experienced during drilling applications. This mechanism, coupled with mismatch of the coefficients of thermal expansion of the metallic phase and diamond as temperatures exceed 600°C is believed to account for a significant part of degradation of the general performance criteria known as “thermal stability.” From experimental wear conditions, “back conversion” appears to dominate impairment of the thermal stability of a PDC, promoting premature degradation of the cutting edge and performance.

To reduce problems associated with conventional binder materials (e.g., thermal stability, residual stress, durability), different rates of thermal expansion, and back conversion in poly crystalline diamond cutting elements, so called “thermally stable” poly crystalline diamond (TSD) cutting elements have been developed. A TSD cutting element may be formed by leaching the catalyst material (e g., cobalt) out from interstitial spaces between the diamond grains in the diamond table using, for example, an acid. Substantially all of the catalyst material may be removed from the diamond table, or only a portion may be removed. TSD cutting elements in which substantially all catalyst material has been leached from the diamond table have been reported to be thermally stable up to temperatures of about 1200°C. It has also been established, however, that fully leached diamond tables are relatively more brittle and vulnerable to shear, compressive, and tensile stresses than are non-leached diamond tables. In an effort to provide cutting elements having diamond tables that are more thermally stable relative to non-leached diamond tables, but that are also relatively less brittle and vulnerable to shear, compressive, and tensile stresses relative to fully leached diamond tables, cutting elements have been provided that include a diamond table in which only at least a portion of the catalyst material has been leached from the diamond table. DISCLOSURE

Some embodiments of the present disclosure include a method of forming a cutting element. The method may include providing a supporting substrate including a homogenized binder including Co, Al, C, and one or more of Ni and Re, depositing discrete diamond particles directly on the supporting substrate, sintering the supporting substrate and the discrete diamond particles to a temperature of about 1350°C or greater under a pressure of about 5 GPa or greater to diffuse a portion of the homogenized binder into the discrete diamond particles and inter-bond the discrete diamond particles to form a cutting table attached to the supporting substrate, and converting portions of the homogenized binder into intermetallic phase precipitates including one or more of Ni and Re and metallic phase precipitates.

Additional embodiments include a cutting element for an earth-boring tool. The cutting element may include a cutting table including inter-bonded diamond particles and a binder material within interstitial spaces between the inter-bonded diamond particles, the binder material including Co, Al, C, and one or more of Ni and Re, and a supporting substrate attached to the cuting table. The binder matenal includes a mixture of intermetallic phase precipitates and metallic phase precipitates.

Additional embodiments include a method of forming a cuting element. The method may include forming a supporting substrate including a carbide material dispersed within a homogenized binder comprising Co, Al, C, and one or more of Ni and Re, depositing discrete diamond particles on the supporting substrate, sintering the supporting substrate and the discrete diamond particles to a temperature greater than a solidus temperature of the homogenized binder under a pressure of about 5 GPa or greater to diffuse a portion of the homogenized binder into the discrete diamond particles and interbond the discrete diamond particles to form a PDC atached to the supporting substrate, and simultaneously converting portions of the homogenized binder into intermetallic phase precipitates and metallic phase precipitates.

BRIEF DESCRIPTION OF THE DRAWINGS

For a detailed understanding of the present disclosure, reference should be made to the following detailed description, taken in conjunction with the accompanying drawings, in which like elements have generally been designated with like numerals, and wherein: FIG. 1 A is an electron image of a prior art Co-Al-C alloy material;

FIG. IB is an electron image of a prior art cutting element including a Co-Al-C alloy material;

FIGS. 2A through 2B are cross-sectional views at various acts of a method of forming a cutting element, in accordance with embodiments of the disclosure;

FIG. 3A is an optical image of a binder material having a modulated morphology, in accordance with embodiments of the disclosure;

FIG. 3B is an electron image of a binder material having a modulated morphology, in accordance with embodiments of the disclosure;

FIG. 3C is an electron image of a binder material having a modulated morphology, in accordance with embodiments of the disclosure;

FIG. 3D is an electron image of a cutting element including a binder material having a modulated morphology, in accordance with embodiments of the disclosure, following a fracture event;

FIG. 4 is a partial cut-away perspective view of a cutting element, in accordance with embodiments of the disclosure; and

FIG. 5 is a perspective view of an earth-boring tool including one or more cutting elements, in accordance with embodiments of the disclosure.

MODE(S) FOR CARRYING OUT THE INVENTION

The illustrations presented herein are not actual views of any particular cutting elements or earth-boring tools, but are merely idealized representations that are employed to describe example embodiments of the present disclosure. Additionally, elements common between figures may retain the same numerical designation.

The cutting elements, earth-boring tools, and methods of the present disclosure include controlling a binder phase morphology of a binder material present in a polycrystallinc diamond compact (PDC) to include an intermetallic phase to ensure thermal stability and a metallic phase to ensure durability. The controlled binder phase morphology can provide both increased PDC durability and reduced residual stress by allowing the metallic phase to effectively accommodate imposed strains that would otherwise cause failure in Co-Al-C PDCs without a controlled binder phase morphology. Control of the binder phase morphology can be accomplished through two approaches. In one approach, shifting the carbon saturated eutectic composition of the intermetallic phase binder material to be more Al- rich and/or to promote solidification segregation by addition of Ni to reduce the carbon solubility of the intermetallic phase binder material. In another approach, promoting solidification segregation by addition of Re, since Re exhibits limited solubility in the intermetallic phase binder material, promoting solidification of modulated metallic and intermetallic phases of the binder material.

As used herein, the term “particle” means and includes any coherent volume of solid matter having an average dimension of about 500 pm or less. Grains (i.e., crystals) and coated grains are types of particles.

As used herein, the term “poly crystalline diamond compact” means and includes any structure including a polycrystalline diamond material including inter-granular bonds formed by a process that involves application of pressure (e.g., compaction) to the precursor material or materials used to form the poly crystalline diamond material.

Thus, as used herein, the term “leached,” when used in relation to a volume of polycrystallinc hard material (e.g., a polycrystallinc diamond table), means that the volume or at least a region of the volume does not include catalyst material in interstitial spaces between inter-bonded diamond grams, regardless of whether or not catalyst material was removed from that region (by a leaching process or any other removal process). Similarly, as used herein the term “leaching” means and includes removal of a catalyst material from interstitial spaces between inter-bonded diamond grains of a polycrystalline diamond table by any technique, without limitation to acid leaching.

As used herein, the term “earth-boring tool” means and includes any type of bit or tool used for drilling during the formation or enlargement of a wellbore and includes, for example, rotary drill bits, percussion bits, core bits, eccentric bits, bi-center bits, reamers, mills, drag bits, roller-cone bits, hybrid bits, and other drilling bits and tools known in the art.

As used herein, the terms “comprising,” “including,” “containing,” and grammatical equivalents thereof are inclusive or open-ended terms that do not exclude additional, un-recited elements or method steps, but also include the more restrictive terms “consisting of,” “consisting essentially of,” and grammatical equivalents thereof.

As used herein, the term “may” with respect to a material, structure, feature, or method act indicates that such is contemplated for use in implementation of an embodiment of the disclosure, and such term is used in preference to the more restrictive term “is” so as to avoid any implication that other compatible materials, structures, features, and methods usable in combination therewith should or must be excluded.

As used herein, the term “configured” refers to a size, shape, material composition, and arrangement of one or more of at least one structure and at least one apparatus facilitating operation of one or more of the structure and the apparatus in a predetermined way.

As used herein, the singular forms following “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.

As used herein, the term “substantially” in reference to a given parameter, property, or condition means and includes to a degree that one skilled in the art would understand that the given parameter, property, or condition is met with a small degree of variance, such as within acceptable manufacturing tolerances. For example, a parameter that is substantially met may be at least about 90% met, at least about 95% met, at least about 99% met, or even about 100% met.

As used herein, the term “about” used in reference to a given parameter is inclusive of the stated value and has the meaning dictated by the context (e.g., it includes the degree of error associated with measurement of the given parameter).

FIGS. 2A and 2B depict a method of forming a cutting element, in accordance with embodiments of the disclosure. As described in further detail below, the method includes providing a supporting substrate 104 including a homogenized binder including Co, Al, C, and Ni and/or Re on a diamond powder 102 and subjecting the supporting substrate 104 and the diamond powder 102 to a sintering process to form a poly crystalline diamond compact (PDC) 112 in situ on the supporting substrate 104 to form a cutting element 114. The PDC 112 includes a solid binder material having a modulated morphology including intermetallic phase precipitates and metallic phase precipitates, such that the PDC 112 is more thermally stable and durable as compared to PDCs formed using conventional Co, Co-Ni, or Co-Ni-Cr binder materials and has lower residual stress and increased composite durability as compared to PDCs formed using conventional Co-Al-C binder materials.

Referring to FIG. 2A, the diamond powder 102 may be provided within a container 100, sometimes referred to in the industry as a cartridge or a cup, that is typically comprised of a metal alloy. The supporting substrate 104 may be provided on the diamond powder 102 within the container 100. In some embodiments, the supporting substrate 104 is provided directly on the diamond powder 102. The container 100 may at least substantially surround and is used to hold the diamond powder 102 and the supporting substrate 104 in position during an HPHT sintering process. As shown in FIG. 2A, the container 100 may include an inner cup 106 in which the diamond powder 102 and at least a portion of the supporting substrate 104 is disposed, a bottom end piece 108 in which the inner cup 106 may be at least partially disposed, and a top end piece 110 over and at least partially surrounding the supporting substrate 104 and coupled (e.g., swage bonded) to one or more of the inner cup 106 and the bottom end piece 108. In some embodiments, the bottom end piece 108 is omitted (e.g., absent).

The diamond powder 102 may be formed of and include discrete diamond particles (e.g., discrete natural diamond particles, discrete synthetic diamond particles, combinations thereof, etc.). The discrete diamond particles may individually exhibit a desired grain size. The discrete diamond particles may comprise one or more of micro-sized diamond particles and nano-sized diamond particles. For example, an individual grain size of the discrete diamond particles may be within a range of from about 5 nanometers (nm) to about 100 microns (pm), such as within a range of from about 50 nm to about 50 pm, from about 100 nm to about 30 pm, from about 500 nm to about 20 pm, or from about 700 nm to about 10 pm. In some embodiments, grain sizes of the discrete diamond particles comprise a mixture of two or more monomodal grain size distributions. In addition, each of the discrete diamond particles may individually exhibit a desired shape, such as at least one of a spherical shape, a hexahedral shape, an ellipsoidal shape, a cylindrical shape, a conical shape, or an irregular shape. In some embodiments, each of the discrete diamond particles of the diamond powder exhibits a substantially spherical shape. The discrete diamond particles may be monodisperse, wherein each of the discrete diamond particles exhibits substantially the same material composition, size, and shape, or may be poly disperse, wherein at least one of the discrete diamond particles exhibits one or more of a different material composition, a different particle size, and a different shape than at least one other of the discrete diamond particles.

The supporting substrate 104 may include a consolidated structure including a homogenized binder (e.g., an at least substantially homogeneous alloy) comprising cobalt (Co), aluminum (Al), carbon (C), and one or more of nickel (Ni), rhenium (Re). For example, the homogenized binder may be a homogenized Co-Ni-Al-C alloy, a homogenized Co-Re- Al-C alloy, or a homogenized Co-Ni-Re-Al-C alloy. In some embodiments, the homogenized binder includes Co, Al, C, Ni, and Re. A portion of the homogenized binder including Co and Ni and/or Re (e.g., a portion of the homogenized binder excluding Al and C) may include from about 0 atomic % (at %) to about 75 at % Ni, such as, for example, from about 15 at % to about 50 at % Ni, from about 15 at % to about 75 at %, or from about 30 at % to about 50 at % Ni. The portion of the homogenized binder including Co and Ni and/or Re (e.g., the portion of the homogenized binder excluding Al and C) may include from about 0 at % to about 20 at % Re, such as, for example, from about 1 at % to about 15 at % Re, from about 3 at % to about 12 at % Re, or from about 5 at % to about 10 at % Re.

The consolidated structure of the supporting substrate 104 may include particles of a carbide material dispersed within the homogenized binder. The carbide material may include, for example, one or more of tungsten carbide, vanadium carbide, silicon carbide, and tantalum carbide. In some embodiments, the carbide material is tungsten carbide. In some embodiments, the carbide material is a solid solution mixture including Re, such as, for example, Wi- _x (Re) _x C, where 0<x<0.2. The consolidated structure may include from about 75 wt % to about 95 wt % particles of the carbide material, such as, for example, from about 80 wt % to about 95 wt %, from about 85 wt % to about 95 wt %, or from about 80 wt % to about 90 wt %. The consolidated structure may include from about 5 wt % to about 25 wt % homogenized binder, such as, for example, from about 5 wt % to about 20 wt %, from about 5 wt % to about 15 wt %, or from about 10 wt % to about 20 wt %.

The consolidated structure of the supporting substrate 104 may be formed by subjecting a precursor composition to a consolidation process. The precursor composition may include a binder material comprising Co, Al, C, and one or more of Ni and Re, the carbide material, a binding agent, and, optionally, one or more additive(s). The precursor composition may include discrete alloy particles (e.g., discrete Co- Al-C alloy particles, discrete Co-Ni-Al-C alloy particles, discrete Co-Re-Al-C alloy particles, discrete Co-Ni- Re-Al-C alloy particles) and/or discrete elemental (e.g., non-alloy) particles (e.g., discrete elemental Co particles, discrete elemental Al particles, discrete elemental C particles, discrete elemental Ni particles, discrete elemental Re particles). The carbide material may be a powder material. In some embodiments, the precursor composition includes discrete Co-Al-C alloy particles and one or more of discrete elemental Ni particles and discrete elemental Re particles. In some embodiments, the precursor composition includes discrete elemental Co particles, discrete elemental Al particles, discrete elemental C particles, and one or more of discrete elemental Ni particles and discrete elemental Re particles.

The precursor composition may include from about 2.5% by weight (wt %) to about 30 wt % Al, such as, for example, from about 3.5 wt % to about 25 wt % Al, from about 5 wt % to about 20 wt % Al, from about 5 wt % to about 15 wt % Al, or from about 7 wt % to about 12 wt % Al. The precursor composition may include from about 0. 1 wt % to about 4 wt % C, such as, for example, from about 0.5 wt % to about 1 .5 wt %, from about 0.5 wt % to about 2.0 wt %, or from about 1 wt % to about 3 wt %. In some embodiments, a ratio of an amount of Ni to an amount of Co in the precursor composition is about 30:70.

The precursor composition may include from 0 wt % to about 50 wt % Ni, such as, for example, from about 5 wt % to about 45 wt % Ni, from about 10 wt % to about 40 wt % Ni, from about 15 wt % to about 30 wt % Ni, or from about 20 wt % to about 40 wt % Ni. The precursor composition may include from 0 wt % to about 44 wt % Re, such as, for example, from about 5 wt % to about 40 wt % Re, from about 10 wt % to about 30 wt % Re, or from about 15 wt % to about 25 wt % Re. In some embodiments, the precursor composition includes about 12.01 wt % Co, about 1.27 wt % Al, about 0.68 wt % C, about 9.55 wt % Re, and about 76.48 wt % carbide material (e.g., WC).

Each of the discrete particles (e.g., discrete alloy particles and/or discrete elemental particles) of the precursor composition may individually exhibit a desired particle size, such as a particle size less than or equal to about 1000 micrometers (pm). The discrete particles may comprise, for example, one or more of discrete micro-sized composite particles and discrete nano-sized composite particles. As used herein, the term “microsized” means and includes a particle size with a range of from about one (1) pm to about 1000 pm, such as from about 1 pm to about 500 pm, from about 1 pm to about 100 pm, or from about 1 pm to about 50 pm. As used herein, the term “nano-sized” means and includes a particle size of less than 1 pm, such as less than or equal to about 500 nanometers (nm), or less than or equal to about 250 nm. In addition, each of the discrete particles may individually exhibit a desired shape, such as one or more of a spherical shape, a hexahedral shape, an ellipsoidal shape, a cylindrical shape, a conical shape, or an irregular shape. The discrete particles (e.g., discrete alloy particles and/or discrete elemental particles) of the precursor composition may be monodisperse, wherein each of the discrete particles exhibits substantially the same size and substantially the same shape, or may be poly disperse, wherein at least one of the discrete particles exhibits one or more of a different particle size and a different shape than at least one other of the discrete particles. In some embodiments, the discrete particles of the precursor composition have a multimodal (e.g., bi-modal, tri-modal, etc.) particle (e.g., grain) size distribution. For example, the precursor composition may include a combination of relatively larger, discrete particles and relatively smaller, discrete particles. The multi-modal particle size distribution of the precursor composition may, for example, provide the precursor composition with desirable particle packing characteristics for the subsequent formation of a consolidated structure (e.g., supporting substrate) therefrom, as described in further detail below. In additional embodiments, the precursor composition has a mono-modal particle size distribution. For example, all of the discrete particles of the precursor composition may exhibit substantially the same particle size.

The binding agent may comprise any material permitting the precursor composition to retain a desired shape during subsequent processing, and which may be removed (e.g., volatilized off) during the subsequent processing. By way of non-limiting example, the binding agent may comprise an organic compound, such as a wax (e.g., a paraffin wax). In some embodiments, the binding agent of the precursor composition is a paraffin wax.

The additive(s), if present, may comprise any material(s) formulated to impart a consolidated structure (e.g., supporting substrate) subsequently formed from the precursor composition with one or more desirable material properties (e.g., fracture toughness, strength, hardness, hardenability, wear resistance, coefficient of thermal expansions, thermal conductivity, corrosion resistance, oxidation resistance, ferromagnetism, etc ), and/or that impart a homogenized binder of the subsequently formed consolidated structure with a material composition facilitating the formation of a compact structure (e.g., a cutting table, such as a PDC table) having desired properties (e.g., wear resistance, impact resistance, thermal stability, etc.) using the consolidated structure. By way of non-limiting example, the additive(s) may comprise one or more elements of one or more of Group IIIA (e.g., boron (B), aluminum (Al)); Group IVA (e.g., carbon (C), silicon (Si), germanium (Ge), tin (Sn)); Group IVB (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf)); Group VB (e.g., vanadium (V), niobium (Nb), tantalum (Ta)); Group VIB (e.g., chromium (Cr), molybdenum (Mo), tungsten (W)); Group VIIB (e.g., manganese (Mn)); Group VIIIB (e.g., iron (Fe), ruthenium (Ru), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni)); Group IB (e.g., copper (Cu), Silver (Ag), gold (Au)); and Group IIB (e.g., zinc (Zn), cadmium (Cd)) of the Periodic Table of Elements. In some embodiments, the additive(s) comprise discrete particles each individually including one or more of B, Al, C, Si, Ge, Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Rh, Ir, Ni, Cu, Ag, Au, Zn, and Cd. However, additions of a high amount of Fe, Mn, Si, Ge, Sn, and Ru may result in negligible to detrimental changes in a morphology of a solid binder material within the formed PDC 112.

The consolidation process may include forming the precursor composition into green structure having a shape generally corresponding to the shape of the consolidated structure, subjecting the green structure to at least one densification process (e.g., a sintering process, a hot isostatic pressing (HIP) process, a sintered-HIP process, a hot pressing process, etc.) to form a consolidated structure including particles of the carbide material dispersed within an at least partially (e.g., substantially) homogenized binder, and, optionally, subjecting the consolidated structure to at least one supplemental homogenization process to further homogenize the at least partially homogenized binder. As used herein, the term “green” means unsintered. Accordingly, as used herein, a “green structure” means and includes an unsintered structure comprising a plurality of particles, which may be held together by interactions between one or more materials of the plurality of particles and/or another material (e.g., a binder).

The precursor composition may be formed into the green structure through conventional processes, which are not described in detail herein. For example, the precursor composition may be provided into a cavity of a container (e.g., canister, cup, etc.) having a shape complementary to a desired shape (e.g., a cylindrical column shape) of the consolidated structure, and then the precursor composition may be subjected to at least one pressing process (e.g., a cold pressing process, such as a process wherein the precursor composition is subjected to compressive pressure without substantially heating the precursor composition) to form the green structure. The pressing process may, for example, subject the precursor composition within the cavity of the container to a pressure greater than or equal to about 10 tons per square inch (tons/in ² ) (about 1406 kilograms per square centimeter (kg/cm ² )), such as within a range of from about 10 tons/in ² to about 30 tons/in ² (about 4218 kg/cm ² ). Following the formation of the green structure, the binding agent may be removed from the green structure. For example, the green structure may be dewaxed by way of vacuum or flowing hydrogen at an elevated temperature. The resulting (e.g., dewaxed) structure may then be subjected to a partial sintering (e.g., pre-sintering) process to form a brown structure having sufficient strength for the handling thereof.

Following the formation of the brown structure, the brown structure may be subjected to a densification process (e.g., a sintering process, a hot isostatic pressing (HIP) process, a sintered-HTP process, a hot pressing process, etc.) that applies sufficient heat and sufficient pressure to the brown structure to form the consolidated structure including the particles of carbide material dispersed in the at least partially homogenized binder. By way of non-limiting example, the brown structure may be wrapped in a sealing material (e.g., graphite foil), and may then be placed in a container made of a high temperature, selfsealing material. The container may be filled with a suitable pressure transmission medium (e.g., glass particles, ceramic particles, graphite particles, salt particles, metal particles, etc.), and the wrapped brown structure may be provided within the pressure transmission medium. The container, along with the wrapped brown structure and pressure transmission medium therein, may then be heated to a consolidation temperature facilitating the formation of the homogenized binder (e.g., the homogenized Co-Ni-Al-C alloy binder, the homogenized Co-Re- Al-C alloy binder, or the homogenized Co-Ni-Re-Al-C alloy binder) under isostatic (e.g., uniform) pressure applied by a press (e.g., a mechanical press, a hydraulic press, etc.) to at least partially (e.g., substantially) consolidate the brown structure and form the consolidated structure. The consolidation temperature may be a temperature greater than the solidus temperature of at least the discrete particles (e.g., discrete alloy particles and/or discrete elemental particles) of the precursor composition used to form the brown structure (e.g., a temperature greater than or equal to the liquidus temperature of the discrete particles, a temperature between the solidus temperature and the liquidus temperature of the discrete particles, etc.), and the applied pressure may be greater than or equal to about 10 megapascals (MPa) (e.g., greater than or equal to about 50 MPa, greater than or equal to about 100 MPa, greater than or equal to about 250 MPa, greater than or equal to about 500 MPa, greater than or equal to about 750 MPa, greater than or equal to about 1.0 gigapascals (GPa), etc.). In some embodiments, during the densification process, discrete elemental Ni particles, discrete elemental Re particles, and/or additive(s) (if any) present in the brown structure may diffuse into and homogeneously intermix with a molten Co-Al-C alloy to form the at least partially homogenized binder (e.g., the homogenized Co-Ni-Al-C alloy binder, the homogenized Co-Re-Al-C alloy binder, or the homogenized Co-Ni-Re-Al-C alloy binder) of the consolidated structure. In some embodiments, during the densification process, at least some of the Re (if present) may diffuse into the particles of the carbide material to form a solid solution mixture, such as, for example, Wi- _x (Re) _x C, where 0<x<0.2. The precursor composition may, therefore, include a relatively greater amount of Re, if present, than the at least partially homogenized binder.

As previously mentioned, following formation, the consolidated structure may be subj ected to a supplemental homogenization process to further homogenize the at least partially homogenized binder thereof. If performed, the supplemental homogenization process may heat the consolidated structure to one or more temperatures above the liquidus temperature of the at least partially homogenized binder thereof for a sufficient period of time to reduce (e.g., substantially eliminate) macrosegregation within the at least partially homogenized binder and provide the resulting further homogenized binder with a single (e.g., only one) melting temperature. In some embodiments, such as in embodiments wherein the precursor composition employed to form the consolidated structure comprises discrete elemental particles (e.g., discrete elemental Co particles, discrete elemental Al particles, discrete C particles, discrete elemental Ni particles, discrete elemental Re particles) the at least partially homogenized binder of the consolidated structure may have multiple (e.g., at least two) melting temperatures following the densification process due to one or more regions of at least partially homogenized binder exhibiting different material composition(s) than one or more other regions of at least partially homogenized binder. Such different regions may, for example, form as a result of efficacy margins in source powder mixing and cold consolidation. In such embodiments, the supplemental homogenization process may substantially melt and homogenize the at least partially homogenized binder to remove the regions exhibiting different material composition(s) and provide the further homogenized binder with only one melting point. Providing the homogenized binder of the consolidated structure with only one melting point may be advantageous for the subsequent formation of a cutting table using the consolidated structure, as described in further detail below. In additional embodiments, such as in embodiments wherein the at least partially homogenized binder of the consolidated structure is already substantially homogeneous (e.g., does not include regions exhibiting different material composition(s) than other regions thereof) following the densification process, the supplemental homogenization process may be omitted.

The supporting substrate 104 may be formed to exhibit any desired dimensions and any desired shape. The dimensions and shape of the supporting substrate 104 may at least partially depend upon desired dimensions and desired shapes of a compact structure (e.g., a cutting table, such as the PDC 112) to subsequently be formed on and/or attached to the supporting substrate 104, as described in further detail below. In some embodiments, the supporting substrate 104 is formed to exhibit a cylindrical column shape. In additional embodiments, the supporting substrate 104 is formed to exhibit a different shape, such as a dome shape, a conical shape, a frusto-conical shape, a rectangular column shape, a pyramidal shape, a frusto pyramidal shape, a fin shape, a pillar shape, a stud shape, or an irregular shape. Accordingly, the supporting substrate 104 may be formed to exhibit any desired lateral cross-sectional shape including, but not limited to, a circular shape, a semicircular shape, an ovular shape, a tetragonal shape (e.g., square, rectangular, trapezium, trapezoidal, parallelogram, etc.), a triangular shape, an elliptical shape, or an irregular shape.

Referring next to FIG. 2B, the diamond powder 102 and the supporting substrate 104 may be subjected to HPHT processing (e.g., a sintering process) to form the PDC 112 (e.g., a cutting table) on the supporting substrate 104. The supporting substrate 104 with the PDC 112 bonded thereto form the cutting element 114. The HPHT processing may include subjecting the diamond powder 102 and the supporting substrate 104 to elevated temperature and elevated pressures in a directly pressurized and/or indirectly heated cell for a sufficient time to convert the discrete diamond particles of the diamond powder 102 into inter-bonded diamond particles. Operating parameters (e.g., temperatures, pressures, durations, etc.) of the HPHT processing at least partially depend on the material compositions of the supporting substrate 104 and the diamond powder 102. Temperatures (e.g., sintering temperatures) within the pressurized, heated cell during the HPHT processing may be greater than or equal to about 1350°C, such as, for example, greater than or equal to about 1500°C, greater than or equal to about 1700°C, or greater than or equal to about 1900°C. In some embodiments, temperatures within the heated, pressurized cell may be greater than a solidus temperature (e.g., greater than the solidus temperature and less than or equal to the liquidus temperature, greater than or equal to the liquidus temperature, etc.) of the homogenized binder of the supporting substrate 104. Pressures within the pressurized, heated cell during the HPHT processing may be greater than or equal to about 5.0 GPa, such as, for example, greater than or equal to about 6.0 GPa, greater than or equal to about 7.0 GPa, or greater than or equal to about 8.0 GPa. In some embodiments, pressures within the pressurized, heated cell during the HPHT processing are within a range of from about 5.0 GPa to about 9.0 GPa. The diamond powder 102 and the supporting substrate 104 may be held at such temperatures and pressures for a sufficient amount of time to facilitate the inter-bonding of the discrete diamond particles of the diamond powder 102 to form the PDC 1 12, such as, for example, a period of time between about 30 seconds to about 30 minutes.

During the HPHT processing, the homogenized binder of the supporting substrate 104 melts and at least a portion thereof is swept (e.g., mass transported, diffused) into the diamond powder 102. The homogenized binder received by the diamond powder 102 catalyzes the formation of inter-granular bonds between the discrete diamond particles of the diamond powder 102. The types, amounts, and distributions of individual elements of the homogenized binder swept into the diamond powder 102 during the HTHP processing may be at least substantially the same as the types, amounts, and distributions of individual elements of the homogenized binder of the supporting substrate 104. In other words, the material composition of the homogenized binder diffused into the diamond powder 102 during the HTHP processing to form the PDC 112 is at least substantially the same as the material composition of the homogenized binder of the supporting substrate 104 prior to the HTHP processing. Providing the supporting substrate 104 directly on the diamond powder 102 may ensure that desired and predetermined chemistries of the homogenized binder are swept into the diamond powder 102 during the HTHP processing.

At least the Co of the homogenized binder received by the diamond powder 102 promotes the formation of the inter-bonded diamond particles of the PDC 112. Depending on the amount of Co included in the homogenized binder, substantially all of the Co swept into the diamond powder 102 may be reacted during formation of the PDC 112 or only a portion of the Co swept into the diamond powder 102 may be reacted during formation of the PDC 112. The material composition of the homogenized binder of the supporting substrate 104 may be selected to control the amount of catalytic Co that remains following the formation of the PDC 112. While the homogenized binder may permit the presence of catalytic Co in the PDC 112, the material composition of the homogenized binder may provide the PDC 112 and the homogenized binder with desirable properties (e.g., ductility, durability, thermal stability, etc.). The amount of Co in the homogenized binder of the supporting substrate 104 (and hence, the catalytic Co remaining in the PDC 112 following the formation thereof) may be controlled by controlling the amounts of other elements (e.g., Al, C, Ni, Re, additional elements, etc.) included in the homogenized binder.

The portion of the homogenized binder swept into the diamond powder 102 may facilitate the formation of a solid binder material having a modulated morphology including intermetallic phase precipitates and metallic phase precipitates within interstitial spaces between the inter-bonded diamond particles of the PDC 1 12. A portion of the homogenized binder remaining in the supporting substrate 104 may facilitate formation of the solid binder material having the modulated morphology including intermetallic phase precipitates and metallic phase precipitates within interstitial spaces between the particles of the carbide material. The solid binder material having the modulated morphology is formed as the melted homogenized binder cools and solidifies following the HPHT processing. Therefore, the solid binder material within interstitial spaces between the interbonded diamond particles of the PDC 112 and/or within interstitial spaces between the particles of the carbide material of the supporting substrate 104 may exhibit a modulated morphology containing both a thermally stable intermetallic phase and a ductile metallic phase. The intermetallic phase precipitates and the metallic phase precipitates may render the PDC 112 thermally stable without needing to leach the PDC 112. However, in some embodiments, the solid binder material including the intermetallic phase precipitates and metallic phase precipitates within interstitial spaces of the PDC 112 may be at least partially leached out of the PDC 112.

The modulated morphology of the solid binder material may depend on an amount of Ni and/or an amount of Re within the homogenized binder. The Ni and/or Re within the homogenized binder promotes formation of a eutectic binder structure by forming the intermetallic phase precipitates and the metallic phase precipitates simultaneously as the melted homogenized binder cools and solidifies. The intermetallic phase precipitates may include CO(X)3A1(Y)C _X precipitates, where x is between 0.25 and 1, X may include at least one element (e.g., Ni) that is able to occupy a site of Co, and Y may include at least one element (e g., Re) that is able to occupy a site of Al. The value of x may be altered depending on the element(s) X occupying Co sites. For example, when X includes Ni occupying Co sites of the intermetallic phase precipitates, the carbon solubility of the CO(X)3A1(Y)C _X precipitates and the value of x decreases, shifting the CO(X)3A1(Y)C _X precipitates to be more Al-rich. The CO(X)3A1(Y)CX precipitates having a decreased carbon solubility due to the presence Ni exhibit a favorable increase in ductility. The presence of Ni within the homogenized binder also alters a solidification process of the melted homogenized binder, to form the intermetallic phase precipitates and metallic phase precipitates simultaneously as the homogenized binder solidifies to form the solid binder material.

The presence of Re within the homogenized binder also promotes the formation of the intermetallic phase precipitates and the metallic phase precipitates simultaneously as the homogenized binder solidifies. Re exhibits a limited solubility in the CO(X)3A1(Y)C _X precipitates and, therefore, an amount of Re able to occupy Al sites of the CO(X)3A1(Y)C _X precipitates is limited accordingly. Since a limited amount of Re is soluble within the CO(X)3A1(Y)C _X precipitates and since Re exhibits a high melting temperature of about 3182°C, excess Re promotes precipitation of the metallic phase including the excess Re simultaneously with the intermetallic CO(X)3A1(Y)C _X precipitates, resulting in the formation of the eutectic binder structure.

The eutectic binder structure of the solid binder material within the interstitial spaces of the PDC 112 and/or the interstitial spaces of the supporting substrate 104 may exhibit the modulated morphology in the form of lamellae, dispersed precipitates, or a combination thereof. The lamellae may include alternating lamellae plates (e.g., layers) of the intermetallic phase precipitates and the metallic phase precipitates. A thickness of the lamellae plates may be greater than, less than, or at least substantially equal to a grain size of the diamond particles of the PDC 112. The thickness of the lamellae plates may be greater than, less than, or at least substantially equal to a grain size of the carbide material in the supporting substrate 104. The dispersed precipitates may exhibit any desired shape, such as, for example, at least one of a spherical shape, a cuboidal shape, a hexahedral shape, an ellipsoidal shape, a cylindrical shape, a conical shape, or an irregular shape.

A cooling rate of the melted homogenized binder may be modified (e.g., controlled, chosen) in order to form the solid binder material having desired properties (e.g., thicknesses, size, etc.). For example, a thickness of the lamellae plates may be increased by decreasing the cooling rate. A thickness of the lamellae plates may be decreased by increasing the cooling rate. Sizes of the dispersed precipitates may similarly be increased by decreasing the cooling rate or be decreased by increasing the cooling rate. A size (e.g., length, width, thickness) of the discrete phases (e.g., the intermetallic phase precipitates and the metallic phase precipitates) of the solid binder material, as measured by linear intercept methods on a polished cross-section of the PDC 112 and/or the supporting substrate 104 may be within a range of from about 20 nm to about 100 pm, such as within a range of from 20 nm to about 50 nm, from about 50 nm to about 75 pm, from about 100 nm to about 50 pm, from about 500 nm to about 20 pm, from about 700 nm to about 10 pm, from about 1 pm to about 100 pm, from about 20 pm to about 100 pm, or from about 50 pm to about 100 pm.

FIG. 3 A depicts an electron image of the morphology of a Co-Ni-Al-C solid binder material including intermetallic phase precipitates and metallic phase precipitates, in accordance with embodiments of the disclosure. The darker portions of the image depict the intermetallic phase precipitates and the lighter portions of the image depict the metallic phase precipitates. As depicted in FIG. 3A, the Co-Ni-Al-C solid binder material includes lamellae plates of the intermetallic phase precipitates and the metallic phase precipitates.

FIG. 3B depicts an electron image of the morphology of a Co-Re- Al-C solid binder material including intermetallic phase precipitates and metallic phase precipitates, in accordance with embodiments of the disclosure. The darker portions of the image depict the intermetallic phase precipitates and the lighter portions of the image depict the metallic phase precipitates. As depicted in FIG. 3B, the Co-Re-Al-C solid binder material includes a mixture of lamellae plates of the intermetallic phase precipitates and the metallic phase precipitates and dispersed intermetallic phase precipitates and metallic phase precipitates.

FIG. 3C depicts an electron image of the morphology of a Co-Ni-Re-Al-C solid binder material including intermetallic phase precipitates and metallic phase precipitates, in accordance with embodiments of the disclosure. The darker portions of the image depict the intermetallic phase precipitates and the lighter portions of the image depict the metallic phase precipitates. As shown in FIG. 3C, the Co-Ni-Re-Al-C solid binder material includes a mixture of lamellae plates of the intermetallic phase precipitates and the metallic phase precipitates and dispersed intermetallic phase precipitates and metallic phase precipitates. The Co-Ni-Re-Al-C solid binder material depicted in FIG. 3C may include a hybrid morphology including a mixture of lamellae plate properties and dispersed precipitate properties. As shown, the intermetallic phase precipitates and the metallic phase precipitates were formed simultaneously in each of the binder materials depicted in FIGS. 3A through 3C, resulting in the depicted modulated morphologies. FIG. 3D depicts an electron image of a fracture morphology of a cutting element including a Co-Ni-Al-C binder material including intermetallic phase precipitates and metallic phase precipitates, in accordance with embodiments of the disclosure, following a fracture event. The Co-Ni-Al-C binder material exhibited ductile void coalescence during the fracture event, as evidenced by the ridges depicted within the Co-Ni-Al-C binder material shown in FIG. 3D. The presence of Ni within the binder material reduces the carbon solubility of the Co-Ni-Al-C binder material, as previously described, and modifies the intermetallic phase precipitates to be more ductile and exhibit favorable deformation mechanisms.

FIG. 4 depicts a partial cut-away perspective view of a cutting element 200, in accordance with embodiments the disclosure. The cutting element 200 may be formed in accordance with the methods previously described with reference to FIGS. 2A through 2B. In some embodiments, a cutting table 202 (e.g., a PDC) is formed in situ on a supporting substrate 204 during an HPHT process. The cutting element 200 and components thereof (e.g., the supporting substrate 204 and the cutting table 202) are at least substantially similar to the cutting element 114 and the components thereof (e.g., the supporting substrate 104 and the PDC 112) previously described in detail with reference to FIGS. 2A through 2B. The supporting substrate 204 with the cutting table 202 bonded thereto form the cutting element 200.

The cutting element 200 is depicted in FIG. 4 as exhibiting a cylindrical column shape. However, in some embodiments, the cutting element 200 may exhibit a different shape, such as, for example, a dome shape, a conical shape, a frusto-conical shape, a rectangular column shape, a pyramidal shape, a frusto-pyramidal shape, a fin shape, a pillar shape, a stud shape, or an irregular shape. An interface region 206 between the supporting substrate 204 and the cutting table 202 is depicted in FIG. 4 as being at least substantially planar. However, in some embodiments, the interface region 206 is at least substantially non-planar (e.g., convex, concave, ridged, sinusoidal, angled, jagged, V-shaped, U-shaped, irregularly shaped, etc.). For example, the supporting substrate 204 may include one or more protrusions and/or one or more recesses at the interface region 206 and the PDC may include one or more corresponding complementary recesses and/or corresponding complementary protrusions at the interface region 206.

A thickness (e.g., height) extending from an exposed major surface of the supporting substrate 204 to a cutting face 208 of the cutting element 200 may be within a range of from about 5 millimeters (mm) to about 25 mm, such as, for example, from about 7 mm to about 20 mm or from about 10 mm to about 15 mm. A thickness extending from the interface region 206 to the cutting face 208 of the cutting table 202 may be within a range of from about 0.3 mm to about 10 mm, such as, for example, from about 1 mm to about 5 mm or from about 1.5 mm to about 4 mm. A thickness extending from the interface region 206 to the exposed major surface of the supporting substrate 204 may be within a range of from about 0.7 mm to about 15 mm, such as, for example, from about 1 mm to about 10 mm, or from about 3 mm to about 7 mm.

The supporting substrate 204 may be a consolidated structure including the precursor composition previously described with reference to FIGS. 2A through 2B. For example, the supporting substrate 204 may be a consolidated structure including a carbide material dispersed within a homogenized binder material including Co, Al, C, and one or more of Ni and Re. The homogenized binder material of the supporting substrate 204 may include a solid binder material having a modulated morphology including intermetallic phase precipitates and metallic phase precipitates within interstitial spaces between particles of the carbide material. The supporting substrate 204 is depicted in FIG. 4 as exhibiting a cylindrical column shape. However, the supporting substrate 204 may exhibit any suitable shape with respect to the shape of the cutting element 200.

The cutting table 202 is depicted in FIG. 4 as exhibiting a cylindrical column shape. However, the cutting table 202 may exhibit any suitable shape with respect to the shape of the cutting element 200. The cutting table may exhibit at least one lateral side surface 210, the cutting face 208 opposite the interface region 206, and at least one cutting edge 212 at a periphery of the cutting face 208. Surfaces (e.g., the at least one lateral side surface 210, the cutting face 208) of the cutting table 202 adjacent the cutting edge 212 may each be substantially planar, or one or more of the surfaces of the cutting table 202 adjacent the cutting edge 212 may be at least partially non-planar. Each of the surfaces of the cutting table 202 may be polished, or one or more of the surfaces of the cutting table 202 may be at least partially non-polished. The cutting edge 212 of the cutting table 202 may be at least partially (e.g., substantially) chamfered (e.g., beveled), at least partially (e.g., substantially) radiused (e g., arcuate), at least partially chamfered and partially radiused, or may be nonchamfered and non-radiused. In some embodiments, the cutting edge 212 is chamfered, as shown in FIG. 4. The cutting edge 212 may include a single chamfer or may include multiple (e.g., more than one) chamfers. The cutting table 202 is a PDC formed of inter-bonded diamond particles. The cutting table 202 may include a solid binder material having a modulated morphology including intermetallic phase precipitates and metallic phase precipitates within interstitial spaces between the inter-bonded diamond particles. In some embodiments, at least a portion of the solid binder material is leached out of the cutting table 202 proximate an exposed exterior surface of the cutting table 202. The modulated morphology of the solid binder material may be in the form of lamellae, dispersed precipitates, or a combination thereof, as previously described. The intermetallic phase precipitates within the cutting table 202 are thermally stable, but exhibit high brittleness relative to the metallic phase precipitates. The metallic phase precipitates within the cutting table 202 exhibit a desirable ductility and durability, but are not thermally stable. The metallic phase precipitates of the solid binder material may be positioned within the interstitial spaces of the cutting table 202 in order to mitigate the brittleness of the intermetallic phase precipitates of the solid binder material. Accordingly, the cutting table 202 including the solid binder material having the modulated morphology is thermally stable while being less brittle, less vulnerable to sheer, compressive, and tensile stresses, and more durable as compared to conventional leached (e.g., partially leached or fully leached) cutting tables.

FIG. 5 is a perspective view of an earth-boring tool 300, including one or more cutting elements 302 (e.g., cutting elements 114, 200) in accordance with this disclosure. The earth-boring tool 300 may include a body 304 to which the cutting element(s) 302 may be secured. The earth-boring tool 300 specifically depicted in FIG. 5 is configured as a fixed-cutter earth-boring drill bit, including blades 306 projecting outward from a remainder of the body 304 and defining junk slots 308 between rotationally adjacent blades 306. In such an embodiment, the cutting element(s) 302 may be secured partially within pockets 310 extending into one or more of the blades 306 (e.g., proximate the rotationally leading portions of the blades 306 as primary cutting elements 302, rotationally following those portions as backup cutting elements 302, or both). However, cutting elements 302 as described herein may be bonded to and used on other types of earth-boring tools, including, for example, roller cone drill bits, percussion bits, core bits, eccentric bits, bicenter bits, reamers, expandable reamers, mills, hybrid bits, and other drilling bits and tools known in the art.

Embodiments of the present disclosure further include: Embodiment 1: A method of forming a cutting element, the method comprising: providing a supporting substrate comprising a homogenized binder comprising Co, Al, C, and one or more of Ni and Re; depositing discrete diamond particles directly on the supporting substrate: sintering the supporting substrate and the discrete diamond particles to a temperature of about 1350°C or greater under a pressure of about 5 GPa or greater to diffuse a portion of the homogenized binder into the discrete diamond particles and inter-bond the discrete diamond particles to form a cutting table attached to the supporting substrate; and converting portions of the homogenized binder within interstitial spaces between the interbonded diamond particles into intermetallic phase precipitates comprising one or more of Ni and Re and metallic phase precipitates.

Embodiment 2: The method of embodiment 1, wherein the homogenized binder comprises Co, Al, C, Ni, and Re.

Embodiment 3: The method of any one of embodiments 1 or 2, wherein the metallic phase precipitates comprise Re.

Embodiment 4: The method of any one of embodiments 1 through 3, wherein converting the portions of the homogenized binder within interstitial spaces between the inter-bonded diamond particles into intermetallic phase precipitates comprising one or more of Ni and Re and metallic phase precipitates comprises forming one or more of lamellae plates and dispersed precipitates.

Embodiment 5: The method of embodiment 4, wherein forming one or more of lamellae plates and dispersed precipitates comprises forming alternating lamellae plates of the intermetallic phase precipitates and the metallic phase precipitates.

Embodiment 6: The method of any one of embodiments 4 or 5, wherein forming one or more of lamellae plates and dispersed precipitates comprises forming a mixture of lamellae plates of the intermetallic phase precipitates, lamellae plates of the metallic phase precipitates, dispersed intermetallic phase precipitates, and dispersed metallic phase precipitates.

Embodiment 7: The method of any one of embodiments 1 through 6, wherein converting the portions of the homogenized binder within interstitial spaces between the inter-bonded diamond particles into intermetallic phase precipitates comprising one or more of Ni and Re and metallic phase precipitates comprises simultaneously forming the intermetallic phase precipitates and the metallic phase precipitates. Embodiment 8: The method of any one of embodiments 1 through 7, wherein sintering the supporting substrate and the discrete diamond particles comprises sintering the supporting substrate and the discrete diamond particles under a pressure within a range of from about 5.0 GPa to about 9.0 GPa.

Embodiment 9: A cutting element for an earth-boring tool, comprising: a cutting table comprising inter-bonded diamond particles and a binder material within interstitial spaces between the inter-bonded diamond particles, the binder material comprising Co, Al, C, and one or more of Ni and Re; and a supporting substrate attached to the cutting table, wherein the binder material comprises a mixture of intermetallic phase precipitates and metallic phase precipitates.

Embodiment 10: The cutting element of embodiment 9, wherein the binder material comprises Co, Al, Co, Ni, and Re.

Embodiment 11 : The cutting element of any one of embodiments 9 or 10, wherein the intermetallic phase precipitates comprise CO(X)3A1(Y)C _X precipitates, where x is between 0.25 and 1, X comprises at least one element formulated to occupy a site of Co, and Y comprises at least one element formulated to occupy a site of Al.

Embodiment 12: The cutting element of embodiment 11, wherein X comprises Ni and Y comprises Re.

Embodiment 13: The cutting element of any one of embodiments 9 through 12, wherein the metallic phase precipitates comprise Re.

Embodiment 14: The cutting element of any one of embodiments 9 through 13, wherein the binder material comprises alternating lamellae plates of the intermetallic phase precipitates and metallic phase precipitates.

Embodiment 15: The cutting element of any one of embodiments 9 through 14, wherein the binder material comprises lamellae plates of the intermetallic phase precipitates and metallic phase precipitates, dispersed intermetallic phase precipitates, and dispersed metallic phase precipitates. The embodiments of the disclosure described above and illustrated in the accompanying drawings do not limit the scope of the disclosure, which is encompassed by the scope of the appended claims and their legal equivalents. Any equivalent embodiments are within the scope of this disclosure. Indeed, various modifications of the disclosure, in addition to those shown and described herein, such as alternative useful combinations of the elements described, will become apparent to those skilled in the art from the description. Such modifications and embodiments also fall within the scope of the appended claims and equivalents.