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Patent Searching and Data


Title:
DEFECT REPAIR METHOD AND DEFECT REPAIR DEVICE FOR PHOTOVOLTAIC ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/051433
Kind Code:
A1
Abstract:
Provided is a defect repair method in which, in the process of manufacturing a thin-film solar cell, locations at which a short-circuit may occur as a result of a defect caused by pin holes are insulated in advance and an electrical short-circuit is prevented irrespective of the size, number, and distribution of the pin holes, whereby the manufacturing yield can be improved and production efficiency can be increased. The defect repair method includes: a defect detection step for detecting pin holes (20) penetrating through two semiconductor layers (13), (14) before layering a second electrode layer (15) in a photovoltaic element (10) formed by sequentially stacking a light-transmitting first electrode layer (12), two semiconductor layers (13), (14), and a second electrode layer (15) on a light-transmitting insulating substrate (11); and a material application step for discharging an insulating material (41), using an inkjet head (40), to positions at which the pin holes (20) detected in the defect detection step are present.

Inventors:
NAGATA TAKESHI
INUI HITOSHI
NAKANISHI YASUNORI
HAYASHI YUTAKA
Application Number:
PCT/JP2012/074608
Publication Date:
April 11, 2013
Filing Date:
September 26, 2012
Export Citation:
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Assignee:
SHARP KK (JP)
NAGATA TAKESHI
INUI HITOSHI
NAKANISHI YASUNORI
HAYASHI YUTAKA
International Classes:
H01L31/076; H01L31/20
Domestic Patent References:
WO1993023881A11993-11-25
WO2010052884A12010-05-14
Foreign References:
JPH04336471A1992-11-24
US4451970A1984-06-05
JP2009195968A2009-09-03
JP2002203978A2002-07-19
JP2011243970A2011-12-01
Attorney, Agent or Firm:
YONETSU, Kiyoshi et al. (JP)
Kiyoshi Yonezu (JP)
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Claims: