DEPOSITED CARBON FILM ON ETCHED SILICON FOR ON-CHIP SUPERCAPACITOR

Title:

DEPOSITED CARBON FILM ON ETCHED SILICON FOR ON-CHIP SUPERCAPACITOR

Document Type and Number:

WIPO Patent Application WO/2018/162580

Kind Code:

A3

Abstract:

An on-chip supercapacitor constituted by a silicon substrate and a porous carbon layer positioned thereon, the carbon layer including pseudocapacitive materials. The invention also relates to the method for producing the supercapacitor and the porous material.

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Inventors:

LU PAI (NO)
CHEN XUYUAN (NO)

Application Number:

PCT/EP2018/055650

Publication Date:

December 13, 2018

Filing Date:

March 07, 2018

Export Citation:

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Assignee:

UNIV COLLEGE OF SOUTHEAST NORWAY (NO)

International Classes:

H01G11/26; H01G11/02; H01G11/32; H01G11/46; H01G11/48; H01G11/70; H01G11/86; H01G11/24; H01G11/28; H01G11/68

Domestic Patent References:

WO2011143777A1

2011-11-24

Foreign References:

US8503161B1	2013-08-06
US20160172123A1	2016-06-16
US20120236467A1	2012-09-20
US20110304964A1	2011-12-15
US20160314906A1	2016-10-27
US20080247118A1	2008-10-09
US20160148759A1	2016-05-26

Other References:

ZHENG WEN ET AL: "High-performance solid-state on-chip supercapacitors based on Si nanowires coated with ruthenium oxide via atomic layer deposition", JOURNAL OF POWER SOURCES, vol. 341, 2 December 2016 (2016-12-02), pages 1 - 10, XP029863962, ISSN: 0378-7753, DOI: 10.1016/J.JPOWSOUR.2016.11.093

Attorney, Agent or Firm:

PROTECTOR IP CONSULTANTS AS (NO)

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