DETECTING EFFECT OF CORRUPTING EVENT ON PRELOADED DATA IN NON-VOLATILE MEMORY

Title:

DETECTING EFFECT OF CORRUPTING EVENT ON PRELOADED DATA IN NON-VOLATILE MEMORY

Document Type and Number:

WIPO Patent Application WO/2014/164134

Kind Code:

A3

Abstract:

A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

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Inventors:

JEON SEUNGJUNE (US)
ALROD IDAN (IL)
LI QING (US)
YANG XIAOYU (US)

Application Number:

PCT/US2014/020768

Publication Date:

January 08, 2015

Filing Date:

March 05, 2014

Export Citation:

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Assignee:

SANDISK TECHNOLOGIES INC (US)

International Classes:

G11C29/02; G11C16/34

Foreign References:

US20050083726A1	2005-04-21
US20110199823A1	2011-08-18

Attorney, Agent or Firm:

TOLER, JEFFREY G. (Suite A201Austin, Texas, US)

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