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Title:
DEVICE AND METHOD FOR EVALUATING RELIABILITY OF METALLIC INTERCONNECTION AND RECORDED MEDIUM ON WHICH EVALUATION OF RELIABILITY OF METALLIC INTERCONNECTION IS RECORDED
Document Type and Number:
WIPO Patent Application WO/2000/063962
Kind Code:
A1
Abstract:
Formation of void and disconnection failure are predicted based on numerical simulation using EM damage dominance parameters of metallic interconnection. For numerical simulation, metallic interconnection is divided into elements. The current density and temperature distribution are found by numerical analysis (S304). The atomic flux divergence AFD¿gen? of each element is calculated using the distributions and the constants (S306) of the physical properties of the material determined in advance by an accelerated test (S308). A decrease (S312) of the volume per calculation step in the simulation is given by the product of the volume of an element, the time required for one calculation step, and the volume of an atom corresponding to the found AFD¿gen? (S310). The thickness of each element is decreased with the decrease of volume (S314). It is shown that a void is formed in the element, the thickness of which is decreased. The numerical analysis of the current density and temperature distribution of the metallic interconnection is conducted again considering the thicknesses of the elements (S304). The calculation is repeated.

Inventors:
SASAGAWA KAZUHIKO (JP)
Application Number:
PCT/JP1999/004084
Publication Date:
October 26, 2000
Filing Date:
July 28, 1999
Export Citation:
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Assignee:
JAPAN SCIENCE & TECH CORP (JP)
SASAGAWA KAZUHIKO (JP)
International Classes:
H01L21/66; G06F17/50; (IPC1-7): H01L21/3205; G01R31/02; H01L21/00
Foreign References:
JPH07283283A1995-10-27
Other References:
KIRCHHEIM R. ET AL.: "Atomistic and Computer Modeling of Metallization Failure of Integrated Circuits by Electromigration", JOURNAL OF APPLIED PHYSICS, vol. 70, no. 1, 1 July 1991 (1991-07-01), pages 172 - 181, XP002925388
See also references of EP 1195800A4
Attorney, Agent or Firm:
Kako, Susumu (Higashi-Ikebukuro 1-chome Toshima-ku, Tokyo, JP)
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