Title:
DEVICE WAFER POLISHING PAD
Document Type and Number:
WIPO Patent Application WO/2007/119845
Kind Code:
A1
Abstract:
Provided is a device wafer polishing pad by which uniformity of a device wafer conductor
layer is improved within a wafer plane and stable electrochemical mechanical
polishing can be performed for a long time. Electrolytic solution storing sections
(F) are arranged on a polishing pad (60) so that the openings become smaller in
width and deeper toward the one arranged on the outer circumference side. A conductor
layer (D1) of a device wafer (D) is brought into contact with the liquid surface
of an electrolytic solution (E) in the electrolytic solution storing section
(F), an electrolysis cell (C) is formed by applying a voltage, and the conductor
layer (D1) is electrochemically and mechanically polished by using the electrolysis
cell (C) and a polishing member layer (62).
Inventors:
TOMINAGA SHIGERU (JP)
KONDO SEIICHI (JP)
ABE DAISUKE (JP)
KUNISAKI SYUJI (JP)
KONDO SEIICHI (JP)
ABE DAISUKE (JP)
KUNISAKI SYUJI (JP)
Application Number:
PCT/JP2007/058236
Publication Date:
October 25, 2007
Filing Date:
April 16, 2007
Export Citation:
Assignee:
ROKI TECHNO CO LTD (JP)
TOMINAGA SHIGERU (JP)
KONDO SEIICHI (JP)
ABE DAISUKE (JP)
KUNISAKI SYUJI (JP)
TOMINAGA SHIGERU (JP)
KONDO SEIICHI (JP)
ABE DAISUKE (JP)
KUNISAKI SYUJI (JP)
International Classes:
H01L21/304; B24B37/04
Foreign References:
JP2005139480A | 2005-06-02 | |||
JP2004082270A | 2004-03-18 | |||
JP2003311540A | 2003-11-05 | |||
JP2005260224A | 2005-09-22 |
Attorney, Agent or Firm:
SHOBAYASHI, Masayuki et al. (25-8 Higashi-ikebukuro 1-chom, Toshima-ku Tokyo 13, JP)
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