Title:
DIODE LASER
Document Type and Number:
WIPO Patent Application WO2002054543
Kind Code:
A3
Abstract:
Diode lasers of the formula GaInP/InGaAs on GaAs substrates with GaAlAs/GaAs waveguides which operate at powers higher than 5.3W with emitting apertures of 100 microns are disclodes. By varying compositions of the active layer and by employing strained layer quantum wells, diode lasers are fabricated over the wavelength range of 700 to 1100 nm.
Inventors:
RAZEGHI MANIJEH (US)
Application Number:
PCT/US2002/000451
Publication Date:
September 26, 2002
Filing Date:
January 04, 2002
Export Citation:
Assignee:
MP TECHNOLOGIES LLC (US)
RAZEGHI MANIJEH (US)
RAZEGHI MANIJEH (US)
International Classes:
H01S5/343; H01S5/20; H01S5/34; (IPC1-7): H01L21/20
Foreign References:
| US5586135A | 1996-12-17 | |||
| US6304587B1 | 2001-10-16 | |||
| US6177684B1 | 2001-01-23 | |||
| US4817110A | 1989-03-28 | |||
| US5479427A | 1995-12-26 | |||
| US5727012A | 1998-03-10 |
Download PDF:
Previous Patent: PRESSING TOOL
Next Patent: TUNABLE SEMICONDUCTOR LASER HAVING A CAVITY WITH WAVELENGTH SELECTIVE MIRROR AND MACH-TEHNDER INTERF...
Next Patent: TUNABLE SEMICONDUCTOR LASER HAVING A CAVITY WITH WAVELENGTH SELECTIVE MIRROR AND MACH-TEHNDER INTERF...