Title:
DIODE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/112228
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a diode which can be manufactured with a simple method and has a favorable recovery operation. The diode according to the present invention includes a layer having a high impurity concentration and a layer having a low impurity concentration, and the layer having a low impurity concentration further includes a layer having an activation rate different from other portions (see Fig. 1).
Inventors:
ISHIMARU TETSUYA (JP)
MORI MUTSUHIRO (JP)
MORI MUTSUHIRO (JP)
Application Number:
PCT/JP2013/082454
Publication Date:
July 24, 2014
Filing Date:
December 03, 2013
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L29/861; H01L21/265; H01L21/322; H01L27/04; H01L29/78; H01L29/868
Foreign References:
| JP2008004866A | 2008-01-10 | |||
| JP2007123300A | 2007-05-17 | |||
| JP2000323488A | 2000-11-24 | |||
| JP2009267394A | 2009-11-12 | |||
| JP2003224281A | 2003-08-08 |
Attorney, Agent or Firm:
HIRAKI Yusuke et al. (JP)
Yusuke Hiraki (JP)
Yusuke Hiraki (JP)
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