Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
DISTRIBUTED AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2019/215849
Kind Code:
A1
Abstract:
According to the present invention, CRLH lines (10a-10d), which are composed of left-handed shunt inductors (7a-7d) and left-handed serial capacitors (6a-6d), are provided in gate-side transmission lines (4a-4d) of a plurality of field effect transistors (FETs) (3a-3d).

Inventors:
KAMIOKA, Jun (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
HANGAI, Masatake (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
YAMANAKA, Koji (7-3 Marunouchi 2-chome, Chiyoda-k, Tokyo 10, 〒1008310, JP)
Application Number:
JP2018/017964
Publication Date:
November 14, 2019
Filing Date:
May 09, 2018
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MITSUBISHI ELECTRIC CORPORATION (7-3 Marunouchi 2-chome, Chiyoda-ku Tokyo, 10, 〒1008310, JP)
International Classes:
H03F3/68; H03F3/60
Domestic Patent References:
WO2007049391A12007-05-03
WO2013157298A12013-10-24
Foreign References:
JP2005101871A2005-04-14
US4540954A1985-09-10
Other References:
CAMPBELL, CHARLES: "A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology", IEEE J. SOLID-STATE CIRCUITS, vol. 44, no. 10, October 2009 (2009-10-01), pages 2640 - 2647, XP011276928
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (Akasaka Sanno Center Bldg. 5F, 12-4 Nagata-cho 2-chome, Chiyoda-k, Tokyo 14, 〒1000014, JP)
Download PDF: