Title:
DISTRIBUTED AMPLIFIER
Document Type and Number:
WIPO Patent Application WO/2019/215849
Kind Code:
A1
Abstract:
According to the present invention, CRLH lines (10a-10d), which are composed of left-handed shunt inductors (7a-7d) and left-handed serial capacitors (6a-6d), are provided in gate-side transmission lines (4a-4d) of a plurality of field effect transistors (FETs) (3a-3d).
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Inventors:
KAMIOKA JUN (JP)
HANGAI MASATAKE (JP)
YAMANAKA KOJI (JP)
HANGAI MASATAKE (JP)
YAMANAKA KOJI (JP)
Application Number:
PCT/JP2018/017964
Publication Date:
November 14, 2019
Filing Date:
May 09, 2018
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H03F3/68; H03F3/60
Domestic Patent References:
| WO2007049391A1 | 2007-05-03 | |||
| WO2013157298A1 | 2013-10-24 |
Foreign References:
| JP2005101871A | 2005-04-14 | |||
| US4540954A | 1985-09-10 |
Other References:
CAMPBELL, C.: "A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology", IEEE J. SOLID-STATE CIRCUITS, vol. 44, no. 10, October 2009 (2009-10-01), pages 2640 - 2647, XP011276928, DOI: 10.1109/JSSC.2009.2026824
C. CAMPBELL: "A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology", IEEE J. SOLID-STATE CIRCUITS, vol. 44, no. 10, October 2009 (2009-10-01), pages 2640 - 2647, XP011276928, DOI: 10.1109/JSSC.2009.2026824
See also references of EP 3780390A4
C. CAMPBELL: "A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology", IEEE J. SOLID-STATE CIRCUITS, vol. 44, no. 10, October 2009 (2009-10-01), pages 2640 - 2647, XP011276928, DOI: 10.1109/JSSC.2009.2026824
See also references of EP 3780390A4
Attorney, Agent or Firm:
TAZAWA, Hideaki et al. (JP)
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