Title:
A DMOS DEVICE WITH A PROGRAMMABLE THRESHOLD VOLTAGE
Document Type and Number:
WIPO Patent Application WO2004015745
Kind Code:
A3
Abstract:
A DMOS device is provided which is equipped with a floating gate (45) having a first (49) and second electrode (51) in close proximity thereto. The floating gate (45) is separated from one of the first (49) and second (51) electrode by a thin layer of dielectric material (53) whose dimensions and composition permit charge carriers to tunnel through the dielectric layer (53) either to or from the floating gate (45). This tunneling phenomenon can be used to create a threshold voltage that may be adjust to provide a precise current by placing a voltage between a programming electrode and the body/source and gate electrode of the device.
Inventors:
BLANCHARD RICHARD A
Application Number:
PCT/US2003/025108
Publication Date:
April 29, 2004
Filing Date:
August 11, 2003
Export Citation:
Assignee:
GEN SEMICONDUCTOR INC (US)
International Classes:
H01L21/28; H01L21/336; H01L21/8247; H01L27/115; H01L29/06; H01L29/423; H01L29/78; H01L29/788; (IPC1-7): G11C16/04
Foreign References:
| US5910915A | 1999-06-08 | |||
| US5910925A | 1999-06-08 | |||
| US5963480A | 1999-10-05 |
Other References:
See also references of EP 1550150A4
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