DOPANT-FREE ALGAN-BASED ULTRAVIOLET LIGHT EMITTING DIODE AND PREPARATION METHOD THEREOF

Title:

DOPANT-FREE ALGAN-BASED ULTRAVIOLET LIGHT EMITTING DIODE AND PREPARATION METHOD THEREOF

Document Type and Number:

WIPO Patent Application WO/2016/197650

Kind Code:

A1

Abstract:

The present invention provides a dopant-free AlGaN-based ultraviolet (UV) light emitting diode (LED) and preparation method thereof. The dopant-free AlGaN-based UV LED comprises: a substrate (1); a dopant-free n-type layer (2) deposited on the substrate (1); an active area (3) deposited on the dopant-free n-type layer (2); and a dopant-free p-type layer (4) deposited on the active area (3). The dopant-free AlGaN-based UV LED does not adopt any dopant, increasing material quality of transistor and simplifying steps of growing layers to form the material.

More Like This:

JP2002026393	SEMICONDUCTOR LIGHT EMITTING DEVICE AND DISPLAY USING IT
JP2022154048	LIGHT EMITTING DEVICE AND PROJECTOR
JP2021068889	SEMICONDUCTOR THIN-FILM STRUCTURE AND ELECTRONIC ELEMENT INCLUDING THE SAME

Inventors:

ZHANG LIAN (CN)
ZHANG YUN (CN)
WANG JUNXI (CN)
LI JINMIN (CN)

Application Number:

PCT/CN2016/076851

Publication Date:

December 15, 2016

Filing Date:

March 21, 2016

Export Citation:

Click for automatic bibliography generation Help

Assignee:

INST SEMICONDUCTORS CAS (CN)

International Classes:

H01L33/32; H01L33/00

Foreign References:

CN104882522A	2015-09-02
CN102185064A	2011-09-14
CN103400864A	2013-11-20
US6482665B1	2002-11-19

Attorney, Agent or Firm:

CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
中科专利商标代理有限责任公司 (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: METHOD AND APPARATUS FOR CONTROLLING CAMERA TO TAKE PHOTOGRAPH

Next Patent: METHOD FOR CONTROLLING HEATING, AND TERMINAL